LM3S1133 Luminary Micro, Inc, LM3S1133 Datasheet - Page 492
LM3S1133
Manufacturer Part Number
LM3S1133
Description
Lm3s1133 Arm Microcontroller
Manufacturer
Luminary Micro, Inc
Datasheet
1.LM3S1133.pdf
(527 pages)
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Electrical Characteristics
21.1.5
21.1.6
21.2
21.2.1
21.2.2
492
Flash Memory Characteristics
Table 21-5. Flash Memory Characteristics
a. A program/erase cycle is defined as switching the bits from 1-> 0 -> 1.
Hibernation
Table 21-6. Hibernation Module DC Characteristics
AC Characteristics
Load Conditions
Unless otherwise specified, the following conditions are true for all timing measurements. Timing
measurements are for 4-mA drive strength.
Figure 21-1. Load Conditions
Clocks
Table 21-7. Phase Locked Loop (PLL) Characteristics
a. The exact value is determined by the crystal value programmed into the XTAL field of the Run-Mode Clock Configuration
b. PLL frequency is automatically calculated by the hardware based on the XTAL field of the RCC register.
Parameter
Parameter
V
Parameter
f
f
f
T
ref_crystal
ref_ext
pll
READY
LOWBAT
T
PE
T
pin
T
ERASE
(RCC) register.
T
PROG
RET
ME
CYC
Parameter Name
Number of guaranteed program/erase cycles before failure
Data retention at average operating temperature of 85˚C (industrial) or 105˚C
(extended)
Word program time
Page erase time
Mass erase time
Parameter Name
Low battery detect voltage
Parameter Name
Crystal reference
External clock reference
PLL frequency
PLL lock time
GND
C
L
b
= 50 pF
a
a
3.579545
3.579545
Value
2.35
Min
-
-
Preliminary
Unit
V
Nom
400
-
-
-
8.192
8.192
Max
0.5
-
MHz
MHz
MHz
Unit
ms
a
10,000
Min
200
10
20
20
100,000
Nom
-
-
-
-
July 26, 2008
Max
-
-
-
-
-
cycles
years
Unit
ms
ms
µs
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