KSE13009F Fairchild Semiconductor, KSE13009F Datasheet
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Manufacturer Part Number
KSE13009F
Description
High Voltage Switch Mode Application
Manufacturer
Fairchild Semiconductor
Available stocks
Manufacturer:
PDDDISCRETE
Manufacturer:
FAIRCHILD/仙童
©2000 Fairchild Semiconductor International
High Voltage Switch Mode Application
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
NPN Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: PW 300 s, Duty Cycle 2%
V
V
V
I
I
I
P
T
T
V
I
h
V
V
C
f
t
t
t
C
CP
B
EBO
T
ON
STG
F
FE
J
STG
CBO
EBO
C
CEO
CE
BE
Symbol
ob
CEO
Symbol
(sat)
(sat)
(sus)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
Collector-Emitter Sustaining Voltage
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn ON Time
Storage Time
Fall Time
Parameter
C
T
=25 C)
C
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
KSE13009F
I
V
V
V
I
I
I
I
I
V
V
V
I
R
C
C
C
C
C
C
B1
EB
CE
CE
CB
CE
CC
L
= 10mA, I
= 5A, I
= 8A, I
= 12A, I
= 5A, I
= 8A, I
= 15,6
= - I
Test Condition
= 7V, I
= 5V, I
= 5V, I
= 10V , f = 0.1MHz
= 10V, I
=125V, I
B2
B
B
B
B
= 1.6A
B
C
= 1A
= 1.6A
= 1A
= 1.6A
C
C
= 3A
B
C
= 0
= 5A
= 8A
C
= 0
= 0.5A
= 8A
1
1.Base
Min.
400
8
6
4
-65 ~ 150
2.Collector
Value
700
400
150
12
24
50
9
6
TO-220F
Typ.
180
Max.
3.Emitter
1.5
1.2
1.6
1.1
0.7
40
30
3
1
1
3
Rev. A, February 2000
Units
W
Units
V
V
V
A
A
A
MHz
C
C
mA
pF
V
V
V
V
V
V
s
s
s
Related parts for KSE13009F
KSE13009F Summary of contents
... Output Capacitance ob f Current Gain Bandwidth Product T t Turn ON Time ON t Storage Time STG t Fall Time F * Pulse Test: PW 300 s, Duty Cycle 2% ©2000 Fairchild Semiconductor International KSE13009F T =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition I = 10mA ...
... V [V], COLLECTOR-BASE VOLTAGE CB Figure 3. Collector Output Capacitance 10000 t STG 1000 t F 100 0 [A], COLLECTOR CURRENT C Figure 5. Turn Off Time ©2000 Fairchild Semiconductor International 0.1 0.01 0.1 10 100 Figure 2. Base-Emitter Saturation Voltage 10000 1000 100 10 0.1 100 1000 100 V =125V CC ...
... Typical Characteristics 100 o Tc[ C], CASE TEMPERATURE Figure 1. DC current Gain ©2000 Fairchild Semiconductor International (Continued) 125 150 175 Rev. A, February 2000 ...
... Package Demensions MAX1.47 0.80 0.10 0.35 0.10 2.54TYP [2.54 0.20 ©2000 Fairchild Semiconductor International TO-220F 10.16 ø3.18 0.20 0.10 (7.00) (1.00x45 ) #1 0.50 2.54TYP ] [2.54 ] 0.20 9.40 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, February 2000 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® ...
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