BCP68-10 Infineon Technologies AG, BCP68-10 Datasheet - Page 2

• Manufacturer Part Number: BCP68-10
• Description: NPN Silicon AF Transistor
• Manufacturer: Infineon Technologies AG

Electrical Characteristics at T
Parameter
Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter breakdown voltage
I
Emitter-base breakdown voltage
I
Collector cutoff current
V
Collector cutoff current
V
DC current gain 1)
I
DC current gain 1)
I
DC current gain 1)
I
Collector-emitter saturation voltage1)
I
Base-emitter voltage 1)
I
I
AC Characteristics
Transition frequency
I
1) Pulse test: t =300 s, D = 2%
Collector-base breakdown voltage
I
C
C
E
C
C
C
C
C
C
C
C
CB
CB
= 10 µA, I
= 30 mA, I
= 10 µA, V
= 5 mA, V
= 500 mA, V
= 1 A, V
= 1 A, I
= 5 mA, V
= 1 A, V
= 100 mA, V
= 10 µA, I
= 25 V, I
= 25 V, I
B
CE
CE
= 100 mA
C
CE
CE
E
B
BE
E
E
= 1 V
= 1
= 0
= 0
= 0
CE
= 0
= 0 , T
CE
= 10 V
= 10 V
= 0
= 1 V
= 5 V, f = 100 MHz
A
= 150 °C
A
= 25°C, unless otherwise specified.
BCP68
BCP68-10
BCP68-16
BCP68-25
2
Symbol
V
V
V
V
I
I
h
h
h
V
V
f
T
CBO
CBO
FE
FE
FE
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
CEsat
BE(ON)
min.
100
160
85
85
20
25
25
50
60
5
-
-
-
-
-
-
Values
typ.
100
160
250
100
0.6
-
-
-
-
-
-
-
-
-
-
-
max.
Nov-29-2001
100
100
375
160
250
375
0.5
1
-
-
-
-
-
-
-
-
BCP68
MHz
Unit
-
V
nA
µA
V