fdb8160 Fairchild Semiconductor, fdb8160 Datasheet - Page 3

• Manufacturer Part Number: fdb8160
• Description: N-channel Powertrench Mosfet
• Manufacturer: Fairchild Semiconductor

FDB8160_F085 Rev. C
Electrical Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: Starting T
2: Pulse width = 100s.
t
t
t
t
t
t
V
t
Q
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
d(on)
d(off)
f
on
r
off
rr
Symbol
SD
rr
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
J
= 25
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Time
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
o
C, L = 0.63mH, I
Parameter
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
AS
= 64A
T
J
= 25
o
C unless otherwise noted
V
V
I
I
I
SD
SD
F
DD
GS
= 80A, dI
certification.
= 80A
= 40A
= 15V, I
= 10V, R
Test Conditions
3
SD
D
GS
= 80A,
/dt = 100A/μs
= 1.3Ω
Min
-
-
-
-
-
-
-
-
-
-
17.2
18.9
Typ
0.9
0.8
60
27
48
42
-
-
www.fairchildsemi.com
1.25
Max
137
1.0
60
62
55
-
-
-
-
Units
nC
ns
ns
ns
ns
ns
ns
ns
V
V