fdb8160 Fairchild Semiconductor, fdb8160 Datasheet - Page 4

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fdb8160

Manufacturer Part Number
fdb8160
Description
N-channel Powertrench Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet
FDB8160_F085 Rev. C
Typical Characteristics
Figure 1. Normalized Power Dissipation vs Case
10000
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1000
100
0.01
10
0.1
0
2
1
10
10
-5
-5
SINGLE PULSE
V
D = 0.50
25
DUTY CYCLE - DESCENDING ORDER
GS
0.20
0.10
0.05
0.02
0.01
= 10V
T
SINGLE PULSE
C
, CASE TEMPERATURE
50
Temperature
Figure 3.
10
75
10
-4
-4
100
Normalized Maximum Transient Thermal Impedance
125
Figure 4. Peak Current Capability
(
o
C
)
10
10
t, RECTANGULAR PULSE DURATION(s)
t, RECTANGULAR PULSE DURATION(s)
150
-3
-3
175
4
Figure 2. Maximum Continuous Drain Current vs
10
10
-2
-2
350
300
250
200
150
100
50
0
25
50
T
Case Temperature
10
10
C
, CASE TEMPERATURE
-1
-1
NOTES:
DUTY FACTOR: D = t
PEAK T
75
CURRENT LIMITED
BY PACKAGE
J
= P
T
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
C
I = I
100
DM
= 25
2
x Z
o
C
θJA
10
P
10
o
DM
1
C DERATE PEAK
125
/t
0
x R
0
2
175 - T
150
www.fairchildsemi.com
θJA
(
o
C
t
1
+ T
)
C
V
t
150
2
GS
C
= 10V
175
10
10
1
1

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