si4822dy Fairchild Semiconductor, si4822dy Datasheet - Page 4
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si4822dy
Manufacturer Part Number
si4822dy
Description
Single N-channel, Logic Level, Powertrench Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet
1.SI4822DY.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
si4822dy-NL
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
si4822dy-T1-E3
Manufacturer:
VISHAY
Quantity:
12 935
Part Number:
si4822dy-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si4822dy-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Typical Electrical And Thermal Characteristics
0.01
10
100
0.1
8
6
4
2
0
30
10
Figure 7. Gate Charge Characteristics.
3
1
0
0.05
Figure 9. Maximum Safe Operating Area.
I
0.005
0.002
0.001
D
0.05
0.02
0.01
= 12.5A
0.5
0.2
0.1
SINGLE PULSE
0.0001
R
1
0.1
JA
T = 25°C
V
A
10
GS
= 125°C/W
A
=10V
V
D = 0.5
DS
20
Q
, DRAIN-SOURCE VOLTAGE (V)
0.5
g
0.2
0.1
, GATE CHARGE (nC)
0.05
0.001
0.02
Figure 11. Transient Thermal Response Curve .
1
0.01
30
Single Pulse
2
V
DS
= 5V
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
40
5
15V
0.01
10
50
10V
30 50
60
0.1
t , TIME (sec)
1
4000
2000
1000
400
200
100
50
40
30
20
10
0.001
0
0.1
Figure 8. Capacitance Characteristics.
Figure 10. Single Pulse Maximum Power
1
f = 1 MHz
V
GS
0.2
= 0 V
0.01
V
DS
0.5
, DRAIN TO SOURCE VOLTAGE (V)
P(pk)
SINGLE PULSE TIME (SEC)
Dissipation.
0.1
T - T
R
10
Duty Cycle, D = t /t
J
1
R
JA
t
1
A
JA
(t) = r(t) * R
t
= P * R
2
= 125°C/W
2
1
JA
1
(t)
2
5
JA
100
SINGLE PULSE
R
10
JA
T = 25°C
A
=125°C/W
10
C oss
C rss
C iss
300
Si4822DY Rev.A
100 300
30