s908ey16g2vfar Freescale Semiconductor, Inc, s908ey16g2vfar Datasheet - Page 275

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s908ey16g2vfar

Manufacturer Part Number
s908ey16g2vfar
Description
M68hc08 Microcontrollers Microcontroller
Manufacturer
Freescale Semiconductor, Inc
Datasheet
20.16 Memory Characteristics
Freescale Semiconductor
RAM data retention voltage
FLASH program bus clock frequency
FLASH PGM/ERASE supply voltage (VDD)
FLASH read bus clock frequency
FLASH page erase time
FLASH mass erase time
FLASH PGM/ERASE to HVEN setup time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program hold time
FLASH program time
FLASH return to read time
FLASH cumulative program hv period
FLASH endurance
FLASH data retention time
1. f
2. t
3. t
4. Typical endurance was evaluated for this product family. For additional information on how Freescale defines Typical
5. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
<1 K cycles
>1 K cycles
clearing HVEN to 0.
t
Endurance, please refer to Engineering Bulletin EB619.
to 25°C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please
refer to Engineering Bulletin EB618.
Read
RCV
HV
HV
is defined as the cumulative high voltage programming time to the same row before next erase.
must satisfy this condition: t
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by
is defined as the frequency range for which the FLASH memory can be read.
In the 125
read only.
(4)
Characteristic
(5)
°
C to 135
MC68HC908EY16A • MC68HC908EY8A Data Sheet, Rev. 1
NVS
+ t
°
NVH
C temperature range, the FLASH is guaranteed as
+ t
PGS
+ (t
PROG
NOTE
x 64) ≤ t
V
PGM/ERASE
Symbol
HV
f
t
t
Read
t
MErase
V
t
t
RCV
t
PROG
t
t
t
Erase
NVHL
HV
NVH
PGS
NVS
RDR
maximum.
(3)
(2)
(1)
10 k
Min
100
1.3
2.7
0.9
3.6
10
30
15
1
0
4
5
5
1
100 k
Typ
100
1
4
Memory Characteristics
Max
8 M
5.5
1.1
5.5
40
4
Cycles
Years
MHz
Unit
ms
ms
ms
Hz
μs
μs
μs
μs
μs
μs
V
V
275

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