s908ey16g2vfar Freescale Semiconductor, Inc, s908ey16g2vfar Datasheet - Page 40
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s908ey16g2vfar
Manufacturer Part Number
s908ey16g2vfar
Description
M68hc08 Microcontrollers Microcontroller
Manufacturer
Freescale Semiconductor, Inc
Datasheet
1.S908EY16G2VFAR.pdf
(292 pages)
- Current page: 40 of 292
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Memory
2.6.1 FLASH Control Register
The FLASH control register (FLCR) controls FLASH program and erase operations.
HVEN — High-Voltage Enable Bit
MASS — Mass Erase Control Bit
ERASE — Erase Control Bit
PGM — Program Control Bit
40
This read/write bit enables the charge pump to drive high voltages for program and erase operations
in the array. HVEN can be set only if either PGM = 1 or ERASE = 1 and the proper sequence for
program or erase is followed.
Setting this read/write bit configures the 16-Kbyte FLASH array for mass or page erase operation.
This read/write bit configures the memory for erase operation. ERASE is interlocked with the PGM bit
such that both bits cannot be equal to 1 or set to 1 at the same time.
This read/write bit configures the memory for program operation. PGM is interlocked with the ERASE
bit such that both bits cannot be equal to 1 or set to 1 at the same time.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
1 = Mass erase operation selected
0 = Page erase operation selected
1 = Erase operation selected
0 = Erase operation unselected
1 = Program operation selected
0 = Program operation unselected
Address:
Reset:
Read:
Write:
$FE08
Bit 7
0
0
MC68HC908EY16A • MC68HC908EY8A Data Sheet, Rev. 1
Figure 2-3. FLASH Control Register (FLCR)
= Unimplemented
6
0
0
5
0
0
4
0
0
HVEN
3
0
MASS
2
0
ERASE
1
0
Freescale Semiconductor
PGM
Bit 0
0
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