mt48lc16m16a2 Micron Semiconductor Products, mt48lc16m16a2 Datasheet - Page 34

• Manufacturer Part Number: mt48lc16m16a2
• Description: 256mb X4, X8, X16 Sdram
• Manufacturer: Micron Semiconductor Products

TRUTH TABLE 4 – CURRENT STATE BANK n, COMMAND TO BANK m
(Notes: 1-6; notes appear below and on next page)
NOTE: 1. This table applies when CKE
256Mb: x4, x8, x16 SDRAM
256MSDRAM_E.p65 – Rev. E; Pub. 3/02
CURRENT STATE CS# RAS# CAS# WE#
Precharging
(With Auto
(With Auto
Activating,
Precharge)
Precharge)
Precharge
Precharge
Disabled)
Disabled)
Active, or
(Auto
(Auto
Write
Write
Read
Read
Row
Any
Idle
2. This table describes alternate bank operation, except where noted; i.e., the current state is for bank n and the
3. Current state definitions:
previous state was self refresh).
commands shown are those allowed to be issued to bank m (assuming that bank m is in such a state that the given
command is allowable). Exceptions are covered in the notes below.
Precharge Enabled: Starts with registration of a READ command with auto precharge enabled, and ends when
Precharge Enabled: Starts with registration of a WRITE command with auto precharge enabled, and ends when
Write w/Auto
Read w/Auto
H
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
Row Active: A row in the bank has been activated, and
Write: A WRITE burst has been initiated, with auto precharge disabled, and has not yet terminated
H
H
H
H
H
H
H
H
H
H
H
X
X
Read: A READ burst has been initiated, with auto precharge disabled, and has not yet terminated or
L
L
L
L
L
L
L
L
L
L
Idle: The bank has been precharged, and
H
H
H
H
H
X
H
X
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
register accesses are in progress.
been terminated.
or been terminated.
has been met. Once
has been met. Once
n-1
was HIGH and CKE
H
H
H
H
H
H
H
H
H
H
H
X
X
L
L
L
L
L
L
L
L
L
L
COMMAND (ACTION)
ACTIVE (Select and activate row)
READ (Select column and start READ burst)
PRECHARGE
ACTIVE (Select and activate row)
WRITE (Select column and start WRITE burst)
PRECHARGE
ACTIVE (Select and activate row)
WRITE (Select column and start new WRITE burst)
PRECHARGE
ACTIVE (Select and activate row)
READ (Select column and start new READ burst)
WRITE (Select column and start WRITE burst)
ACTIVE (Select and activate row)
READ (Select column and start READ burst)
WRITE (Select column and start new WRITE burst)
COMMAND INHIBIT (NOP/Continue previous operation)
NO OPERATION (NOP/Continue previous operation)
Any Command Otherwise Allowed to Bank m
WRITE (Select column and start WRITE burst)
READ (Select column and start new READ burst)
READ (Select column and start READ burst)
PRECHARGE
PRECHARGE
t
t
RP is met, the bank will be in the idle state.
RP is met, the bank will be in the idle state.
n
is HIGH (see Truth Table 2) and after
34
t
RP has been met.
t
RCD has been met. No data bursts/accesses and no
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb: x4, x8, x16
t
XSR has been met (if the
©2002, Micron Technology, Inc.
SDRAM
7, 8, 14
7, 8, 15
7, 8, 16
7, 8, 17
NOTES
7, 10
7, 11
7, 12
7, 13
7
7
9
9
9
9
t
RP
t
RP