mt45w4mw16bcgb Micron Semiconductor Products, mt45w4mw16bcgb Datasheet - Page 33

• Manufacturer Part Number: mt45w4mw16bcgb
• Description: 64mb 4 Meg X 16 Async/page/burst Cellularram 1.5 Memory
• Manufacturer: Micron Semiconductor Products

Device Identification Register
Table 9:
PDF: 09005aef8247bd51/Source: 09005aef8247bd83
64mb_burst_cr1_5_p25z_133mhz__2.fm - Rev. F 9/07 EN
Bit Field
Field name
Bit setting
Meaning
Device Identification Register Mapping
Row length
128 words
DIDR[15]
0b
Note:
The DIDR provides information on the device manufacturer, the CellularRAM genera-
tion, and the specific device configuration. Table 9 describes the bit fields in the DIDR.
The DIDR is accessed with CRE HIGH and A[19:18] = 01b or through the register access
software sequence with DQ = 0002h on the third cycle.
Vendors with 256-word row lengths for CellularRAM 1.5 devices will set DIDR[15] to 1b.
Bit Setting Version
0000b
0001b
0010b
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory
Device version
(etc.)
DIDR[14:11]
(etc.)
2nd
3rd
1st
Device density
DIDR[10:8]
33
64Mb
010b
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CellularRAM generation
CellularRAM 1.5
DIDR[7:5]
010b
©2005 Micron Technology, Inc. All rights reserved.
DIDR[4:0]
Vendor ID
00011b
Micron
Registers