mt45w4mw16bcgb Micron Semiconductor Products, mt45w4mw16bcgb Datasheet - Page 50

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mt45w4mw16bcgb

Manufacturer Part Number
mt45w4mw16bcgb
Description
64mb 4 Meg X 16 Async/page/burst Cellularram 1.5 Memory
Manufacturer
Micron Semiconductor Products
Datasheet

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Figure 37:
PDF: 09005aef8247bd51/Source: 09005aef8247bd83
64mb_burst_cr1_5_p25z_133mhz__2.fm - Rev. F 9/07 EN
DQ[15:0]
LB#/UB#
A[21:0]
ADV#
WAIT
WE#
OE#
CLK
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IH
IH
IL
IH
IL
IL
IH
IL
IL
IH
IL
IH
IL
OH
OL
OH
OL
High-Z
READ Burst Suspend
Valid address
t CSP
t SP
t SP
t SP
t SP
Notes:
t HD
High-Z
t HD
t HD
1. Nondefault BCR settings for READ burst suspend: fixed or variable latency; latency code 2 (3
2. CLK can be stopped LOW or HIGH but must be static, with no LOW-to-HIGH transitions dur-
3. OE# can stay LOW during burst suspend. If OE# is LOW, DQ[15:0] will continue to output
t OLZ
clocks); WAIT active LOW; WAIT asserted during delay.
ing burst suspend.
valid data.
t ACLK
t BOE
t CLK
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory
Valid output
t KOH
Valid output
Valid output
t CEM
50
Valid output
t OHZ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Note 3
t OLZ
Note 2
t BOE
output
Valid
©2005 Micron Technology, Inc. All rights reserved.
Don’t Care
Timing Diagrams
output
Valid
t HD
t OHZ
t HZ
t CBPH
High-Z
Undefined
Valid address

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