tea1094t NXP Semiconductors, tea1094t Datasheet - Page 14

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tea1094t

Manufacturer Part Number
tea1094t
Description
Hands Free Ic
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
THERMAL CHARACTERISTICS
CHARACTERISTICS
V
measured in test circuit of Fig.12; unless otherwise specified.
1996 Jul 15
R
Supply (V
V
I
P
V
V
I
I
Microphone channel (MIC, GAT, MOUT, MUTET and MICGND)
M
G
V
Z
BB
PD
BB(PD)
BB
SYMBOL
SYMBOL
G
G
G
BB
OWER
IL
IH
notx
th j-a
Hands free IC
vtx
ICROPHONE AMPLIFIER
i
vtxr
vtxT
vtxf
= 5 V; V
-
DOWN INPUT
BB
GND
, GND and PD)
thermal resistance from junction to ambient in free air
supply voltage
current consumption from pin V
LOW level input voltage
HIGH level input voltage
input current
current consumption from pin V
in power-down condition
input impedance between
pins MIC and MICGND
voltage gain from pin MIC to
MOUT in transmit mode
voltage gain adjustment with R
voltage gain variation with
temperature referenced to 25 C
voltage gain variation with
frequency referenced to 1 kHz
noise output voltage at pin MOUT pin MIC connected to
TEA1094
TEA1094A
TEA1094T
TEA1094AT
TEA1094AM
= 0 V; f = 1 kHz; T
PD (TEA1094A
PARAMETER
amb
ONLY
PARAMETER
= 25 C; MUTET = LOW; PD = LOW (TEA1094A only); R
)
GAT
BB
BB
PD = HIGH
PD = HIGH
V
V
T
V
f = 300 to 3400 Hz
MICGND through 200
series with 10 F;
psophometrically weighted
(P53 curve)
amb
MIC
MIC
MIC
= 1 mV (RMS)
= 1 mV (RMS);
= 1 mV (RMS);
= 25 to +75 C
CONDITIONS
14
in
3.3
V
1.5
17
13
15.5
GND
MIN.
TEA1094; TEA1094A
VALUE
104
45
50
70
75
0.4
3.1
2.5
180
20
15.5
TYP.
0.3
0.3
100
L
= 50 ; R
Product specification
12.0
4.4
0.3
V
5
240
23
18
+15.5
BB
MAX.
+ 0.4 V
UNIT
K/W
K/W
K/W
K/W
K/W
VOL
V
mA
V
k
dB
dB
dB
dB
dBmp
= 0 ;
UNIT
A
A

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