tea1094t NXP Semiconductors, tea1094t Datasheet - Page 16

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tea1094t

Manufacturer Part Number
tea1094t
Description
Hands Free Ic
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
1996 Jul 15
D
t
t
THD
V
t
M
V
I
Envelope and noise detectors (TSEN, TENV, RSEN, RENV, RNOI and TNOI)
P
G
G
L
S
I
I
att
rel
att
DLC(th)
source(ENV)
sink(ENV)
SYMBOL
OGARITHMIC COMPRESSOR AND SENSITIVITY ADJUSTMENT
G
V
V
V
BB(th)
DLC(th)
REAMPLIFIERS
IGNAL ENVELOPE DETECTORS
YNAMIC LIMITER
Hands free IC
v(TSEN)
v(RSEN)
UTE RECEIVE
det(TSEN)
det(RSEN)
ENV
vrxm
attack time when V
20 mV to 20 mV + 10 dB
release time when V
from 20 mV + 10 dB to 20 mV
total harmonic distortion at
V
V
attack time when V
V
threshold voltage required on pin
DLC/MUTER to obtain mute
receive condition
threshold current sourced by
pin DLC/MUTER in mute receive
condition
voltage gain reduction in mute
receive condition
voltage gain from MIC to TSEN
voltage gain between RIN1 and
RIN2 to RSEN
sensitivity detection on pin TSEN;
voltage change on pin TENV
when doubling the current from
TSEN
sensitivity detection on
pin RSEN; voltage change on
pin RENV when doubling the
current from RSEN
maximum current sourced from
pin TENV or RENV
maximum current sunk by
pin TENV or RENV
voltage difference between
pins RENV and TENV
RIN
BB
BB(th)
limiter threshold
= 20 mV + 10 dB
PARAMETER
BB
RIN
RIN
jumps below
jumps from
jumps
R
R
R
V
V
I
I
when 10 A is sourced
from both RSEN and
TSEN; envelope detectors
tracking; note 3
TSEN
RSEN
DLC
DLC
GAR
GAR
GAR
= 0.2 V
= 0.8 to 160 A
= 374 k
= 374 k
= 374 k ; t
= 0.8 to 160 A
CONDITIONS
0.2 V
16
t
att
V
37.5
0.75
2.5
GND
MIN.
TEA1094; TEA1094A
0.4
250
0.9
2.9
1
100
80
40
0
18
18
120
1
TYP.
3
Product specification
5
5
0.2
42.5
+2.5
1.25
MAX.
ms
ms
%
V
ms
V
dB
dB
dB
mV
mV
mV
UNIT
A
A
A

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