tc58512ft TOSHIBA Semiconductor CORPORATION, tc58512ft Datasheet - Page 28

• Manufacturer Part Number: tc58512ft
• Description: Tentative Toshiba Mos Digital Integrated Circuit Silicon Gate Cmos
• Manufacturer: TOSHIBA Semiconductor CORPORATION

31 times with incrementing the page address in the blocks, and then input the last page data of the blocks, “10H”
command executes final programming.
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
I/O8
32nd
31st
Starting the above operation from 1st page of the selected erase blocks, and then repeating the operation total
In this full sequence, the command sequence is following.
After the “10H” command, the total results of the above operation is shown through the Status Read command.
The Status discription is following.
1st
RY
/
BY
80
80
80
80
District 0 Pass/Fail
District 1 Pass/Fail
District 2 Pass/Fail
District 3 Pass/Fail
Total Pass/Fail
Write Protect
Ready/Busy
Not Used
STATUS
10
11
11
11
11
80
80
80
80
Pass: 0
Pass: 0
Pass: 0
Pass: 0
Pass: 0
Do not care
Ready: 1
Protect: 0
Status Read
command
11
11
11
11
71
OUTPUT
80
80
80
80
Fail: 1
Fail: 1
Fail: 1
Fail: 1
Fail: 1
Busy: 0
Not Protect: 1
I/O
Fail
11
11
11
11
Pass
If at least one fail occurred in 32 times ´ 4
(512 + 16 byte) page write operation, it
shows “Fail” condition.
If more than one fail occurred in 32 times ´
1 (512 + 16 byte) page write operation in
District 0 area, it shows “Fail” condition.
as I/O2.
I/O1 describes total Pass/Fail condition.
I/O2 describes total Pass/Fail condition.
I/O3, I/O4 and I/O5 are as same manner
80
80
80
80
2001-03-05 28/43
TC58512FT
15
15
15
10