2n3417-d75z Fairchild Semiconductor, 2n3417-d75z Datasheet - Page 2
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2n3417-d75z
Manufacturer Part Number
2n3417-d75z
Description
2n3416/2n3417 Npn General Purpose Amplifier
Manufacturer
Fairchild Semiconductor
Datasheet
1.2N3417-D75Z.pdf
(7 pages)
V
V
V
I
I
ON CHARACTERISTICS*
h
OFF CHARACTERISTICS
h
V
V
SMALL SIGNAL CHARACTERISTICS
Symbol
CBO
EBO
fe
FE
(BR)CEO
(BR)CBO
(BR)EBO
CE(
BE(
*
Electrical Characteristics
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
sat
sat
)
)
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
Small-Signal Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Parameter
TA = 25°C unless otherwise noted
I
f = 1.0 kHz
I
I
I
V
V
V
V
I
I
C
C
E
C
C
C
CB
CB
EB
CE
= 10 A, I
= 2.0 mA, V
= 10 mA, I
= 10 A, I
= 50 mA, I
= 50 mA, I
= 25 V, I
= 18 V, I
= 5.0 V, I
= 4.5 V, I
Test Conditions
E
C
B
E
E
B
B
C
C
= 0
= 0
CE
= 0
= 0
= 0, T
= 3.0 mA
= 3.0 mA
= 0
= 2.0 mA
NPN General Purpose Amplifier
= 4.5 V,
A
= 100 C
2N3416
2N3417
2N3416
2N3417
Min
180
180
5.0
0.6
75
50
50
75
Max
100
100
225
540
0.3
1.3
15
(continued)
Units
nA
nA
V
V
V
V
V
A