ssm6k25fe TOSHIBA Semiconductor CORPORATION, ssm6k25fe Datasheet - Page 2

• Manufacturer Part Number: ssm6k25fe
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Switching Time Test Circuit
Precaution
this product. For normal switching operation, V
voltage than V
(The relationship can be established as follows: V
V
Please take this into consideration when using the device.
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source on-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Note2: Pulse test
(a) Test Circuit
th
can be expressed as the voltage between gate and source when the low operating current value is I
2.5 V
Characteristics
0
V
R
D.U. < = 1%
V
Common Source
Ta = 25°C
th.
DD
IN
G
10 μs
: t
= 4.7 Ω
= 10 V
r
, t
f
Turn-on time
Turn-off time
< 5 ns
IN
(Ta = 25°C)
V
V
R
Symbol
(BR) DSS
(BR) DSX
⏐Y
DS (ON)
I
I
C
C
C
GSS
DSS
V
V
t
t
oss
on
off
iss
rss
th
DD
fs
OUT
⏐
GS (on)
GS (off)
V
I
I
V
V
V
I
I
I
V
V
V
V
V
D
D
D
D
D
GS
DS
DS
DS
DS
DS
DS
DD
GS
= 1 mA, V
= 1 mA, V
= 0.25 A, V
= 0.25 A, V
= 0.25 A, V
(b) V
(c) V
requires a higher voltage than V
= 20 V, V
= 3 V, I
= 3 V, I
= 10 V, V
= 10 V, V
= 10 V, V
= ±12V, V
= 10 V, I
= 0~2.5 V, R
< V
2
OUT
IN
th
D
D
Test Condition
GS
GS
D
GS
GS
GS
= 0.1 mA
= 0.25 A
GS
GS
GS
GS
< V
DS
= 0.25 A,
= 0
= −12 V
= 4.0 V
= 2.5 V
= 1.8 V
G
= 0
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
GS (on)
= 0
= 4.7 Ω
)
V
DS (ON)
(Note2)
(Note2)
(Note2)
(Note2)
2.5 V
V
0 V
DD
th
Min
and V
0.5
1.2
⎯
20
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
t
10%
on
GS (off)
t
r
Typ.
125
150
200
268
2.4
34
44
11
15
⎯
⎯
⎯
⎯
⎯
10%
90%
SSM6K25FE
requires a lower
Max
145
190
395
1.1
±1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
90%
t
D
2007-11-01
off
=100 μA for
t
f
Unit
mΩ
μA
μA
pF
pF
pF
ns
V
V
S