ssm6k25fe TOSHIBA Semiconductor CORPORATION, ssm6k25fe Datasheet - Page 3

• Manufacturer Part Number: ssm6k25fe
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

400
350
300
250
200
150
100
200
180
160
140
120
100
1600
1400
1200
1000
50
80
60
40
20
800
600
400
200
0
0
-60 -40 -20 0
0
0
0
Common Source
ID=250mA
200
VGS=4V
Ambient temperature Ta (°C)
0.2
5.0
1.8V
2.5V
400
Drain-Source voltage VDS (V)
Drain current ID (mA)
4.0
3.0
RDS(ON) - ID
20 40 60 80 100 120 140 160
RDS(ON) - Ta
1.8
600
2.0
ID - VDS
0.4
800 1000 1200 1400 1600
Common Source
Ta=25°C
Common Source
Ta=25°C
0.6
VGS=1.4V
VGS=4V
0.8
1.6
1.8V
2.5V
1
3
10000
1000
0.01
100
0.1
400
350
300
250
200
150
100
10
0.8
0.6
0.4
0.2
50
1
0
1
0
-60 -40 -20 0
0
0
Ta=100°C
1
2
Ambient temperature Ta (°C)
Gate-Source voltage VGS (V)
Gate-Source voltage VGS (V)
-25°C
3
1
RDS(ON) - VGS
20 40 60 80 100 120 140 160
4
25°C
ID - VGS
Vth - Ta
5
25°C
Common Source
ID=0.1mA
VDS=3V
Common Source
VDS=3V
6
Common Source
ID=250mA
SSM6K25FE
2
7
2007-11-01
Ta=100°C
8
-25°C
9
10
3