ssm6k25fe TOSHIBA Semiconductor CORPORATION, ssm6k25fe Datasheet - Page 4

• Manufacturer Part Number: ssm6k25fe
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
1000
100
800
600
400
200
10
10
1
0
0
10
0.1
0
Common Source
VGS=0V
f=1MHz
Ta=25°C
DC
20
-25°C
Drain-Source voltage VDS (V)
40
Ambient temperature Ta( ℃ )
Drain current ID (mA)
100
25°C
1
60
C - VDS
|Yfs| - ID
PD - Ta
Ta=100°C
80
mounted FR4 board
(25.4mm*25.4mm*1.6t
Cu Pad :645mm
100
Common Source
VDS=3V
Ta=25°C
1000
10
120
Ciss
Coss
Crss
2
)
140
10000
160
100
4
1600
1400
1200
1000
1000
800
600
400
200
100
10
0
1
10
0
Common Source
VGS=0V
Ta=25°C
G
ton
toff
tf
tr
-0.2
S
D
Drain-Source voltage VDS (V)
IDR
Drain current ID (mA)
100
-0.4
IDR - VDS
t - ID
Common Source
VDD=10V
VGS=0 ~ 2.5V
Ta=25°C
-0.6
SSM6K25FE
1000
2007-11-01
-0.8
10000
-1