sip11203 Vishay, sip11203 Datasheet - Page 3

• Manufacturer Part Number: sip11203
• Description: Sip11203 - Vishay Power Ics Synchronous Rectifier Driver With Power Up/down Control, Output Ovp, Error Amplifier And Precision Reference
• Manufacturer: Vishay

Document Number: 73868
S-61082–Rev. B, 19-Jun-06
SPECIFICATIONS
Parameter
Logic Inputs - IN A and IN B
Input High
Input Low
Input Resistance
Input Frequency Range (INA and INB)
Error Amplifier - DC Electrical Characteristics
Voltage Gain
Common Mode Rejection Ratio
Input Offset Voltage
V
Input Bias Current
Input Offset Current
Output Voltage
Output Current
Error Amplifier - AC Electrical Characteristics
Gain-Bandwidth Product
Slew Rate
MOSFET Drivers
Driver Impedance
Peak Drive Current
Rise Time
Fall Time
IN to OUT Propagation Delay
Additional Rising Edge OUT A/B
Delay vs. R
Power-down Detection Timeout
Power-up Output Hold-off Current
OS
Temperature Coefficient
DEL
R
R
I
I
PK(SOURCE)
PK(SOURCE)
D(SOURCE)
D(SOURCE)
Symbol
R
R
I
I
Δt
PK(SINK)
PK(SINK)
CMRR
t
PDDET
I
D(SINK)
D(SINK)
I
TC3
V
SR+
HOFF
V
V
SR-
BIAS
BW
DELAY
V
R
I
I
t
t
V
I
A
f
OS
OH
OL
pdr
pdf
IN
OS
OH
t
OL
t
IH
IN
IL
V
r
f
bypassed by 1 µF to GND, INA or INB = 5 V, other
INA/INB rising to OUTA/OUTB rising, 50 % to 50 %
V
INA/INB falling to OUTA/OUTB falling, 50 % to 50 %
V
10 % to 90 %, V
10 % to 90 %, V
90 % to 10 %, V
90 % to 10 %, V
No forcing voltage on V
IN
IN
Sourcing, EA
20 log (ΔV
R
Sinking, EA
input = 0 V, force 1 V at active output (A or B)
DEL
= 5.5 V, R
= 5.5 V, R
Falling, R
V
V
IN A and IN B low to OUT A/OUT B low
V
Rising, R
IN
IN
CM
= 25 kΩ to GND, C
R
V
V
V
= 5.5 V, I
= 7.5 V, I
Unless Otherwise Specified
IN
PD
= 1.225 V, R
IN
IN
OUT
= 13 V, 13 V at INA and/or INB
Input CMR = 0 V to 3.5 V
= 25 kΩ, C
= 5.5 V, T
= 7.5 V, T
OUT
Output sourcing 0.8 mA
DEL
DEL
R
OUT
(I
Output sinking 0.8 mA
LOAD
LOAD
DEL
5.5 V ≤ V
/ΔV
EA+
T
Test Conditions
IN
IN
IN
IN
A
= 2.5 V, EA+ overdrive = 500 mV
connected to V
connected to V
V
= 1.0 V, EA+ overdrive = 500 mV
OUT
OUT
= 5.5 V, C
= 7.5 V, C
= 5.5 V, C
= 7.5 V, C
= - 40 to 85 °C
OS
) - (I
connected to V
CM
= 2 kΩ II 1 nf to Ground
= 2 kΩ II 1 nf to Ground
(Note c)
(Note c)
(Note c)
Falling
Rising
) for V
= 100 mA, T
= 100 mA, T
J
J
= 1.225 V
LOAD
EA-
PD
= 25 °C (Note c)
= 25 °C (Note c)
IN
IN
), (Note c)
= 1 nF (Note c)
or V
LOAD
≤ 13 V
OUT
= 10 kΩ to V
LOAD
LOAD
LOAD
LOAD
L
, both V
= 0.5 V to 3.0 V
= 0 nF (Note d)
L
L
, C
, C
= 6 nF, (Note c)
= 6 nF, (Note c)
= 6 nF, (Note c)
= 6 nF, (Note c)
L
J
J
= 25 °C
= 25 °C
LOAD
LOAD
IN
CM
and V
= 0 nF
= 0 nF
L
SiP11203/SiP11204
Min
100
350
4.0
3.0
3.0
3.5
0.8
65
60
20
20
28
a
Vishay Siliconix
Limits
± 0.3
Typ
3.45
0.75
225
530
2.5
2.1
3.8
± 3
4.7
1.3
2.3
1.5
2.1
1.4
1.2
2.4
2.2
4.0
70
65
30
45
42
35
32
32
34
38
25
2
1
1
b
www.vishay.com
Max
± 15
500
400
1.0
4.5
3.7
2.4
3.4
2.2
10
55
55
48
0
a
µV/°C
MHz
V/µs
Unit
mV
mA
mA
kHz
dB
nA
ns
µs
mV
kΩ
Ω
V
A
V
3