tpc8013-h TOSHIBA Semiconductor CORPORATION, tpc8013-h Datasheet - Page 2

• Manufacturer Part Number: tpc8013-h
• Description: Silicon N Channel Mos Type High Speed U-mos Iii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Thermal Characteristics
Marking
Thermal resistance, channel to ambient
(t = 10 s)
Thermal resistance, channel to ambient
(t = 10 s)
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: V
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: · on lower left of the marking indicates Pin 1.
TPC8013
H
(Note 5)
* shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively.)
DD
= 24 V, T
Characteristics
*
(a)
ch
TYPE
= 25°C (initial), L = 0.5 mH, R
25.4 ´ 25.4 ´ 0.8
(Note 2a)
(Note 2b)
FR-4
(unit: mm)
R
R
Symbol
th (ch-a)
th (ch-a)
G
2
= 25 W, I
65.8
Max
125
(b) Device mounted on a glass-epoxy board (b)
AR
°C/W
°C/W
Unit
= 15 A
(b)
25.4 ´ 25.4 ´ 0.8
FR-4
(unit: mm)
TPC8013-H
2002-03-25