tpc8013-h TOSHIBA Semiconductor CORPORATION, tpc8013-h Datasheet - Page 6

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tpc8013-h

Manufacturer Part Number
tpc8013-h
Description
Silicon N Channel Mos Type High Speed U-mos Iii
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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0.01
100
0.1
10
0.01
1
* Single pulse
Curves must be derated
linearly with increase in
temperature.
I D max (pluse) *
Ta = 25°C
Drain-source voltage V
0.1
1000
100
Safe operating area
0.1
10
0.001
1
(1)
(2)
t = 10 s
Device mounted on a glass-epoxy board (a)
(Note 2a)
Device mounted on a glass-epoxy board (b)
(Note 2b)
1
10 ms*
0.01
V DSS max
DS
10
(V)
1 ms*
0.1
100
Pulse width t
r
th
6
- t
1
w
w
(S)
10
100
Single pulse
(2)
(1)
1000
TPC8013-H
2002-03-25

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