tpc8013-h TOSHIBA Semiconductor CORPORATION, tpc8013-h Datasheet - Page 4

• Manufacturer Part Number: tpc8013-h
• Description: Silicon N Channel Mos Type High Speed U-mos Iii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

100
0.1
10
50
40
30
20
10
10
8
6
4
2
0
0
1
0.1
0
0
10
Common source
V DS = 10 V
Pulse test
4.5
1
0.2
Drain-source voltage V
Gate-source voltage V
2.9
Drain current I
100
2
2.8
0.4
1
I
I
|Y
D
D
Ta = -55°C
fs
– V
– V
| – I
3
Ta = -55°C
GS
DS
100
2.75
D
0.6
25
D
Common source
Ta = 25°C, pulse test
4
GS
DS
(A)
Common source
V DS = 10 V
Pulse test
(V)
(V)
V GS = 2.4 V
0.8
10
25
5
2.7
2.5
2.65
2.6
1.0
30
6
4
100
0.8
0.6
0.4
0.2
20
16
12
10
8
4
0
1
0
1
0.1
0
0
10 4.5
3.8
3.1
2
0.4
Drain-source voltage V
Gate-source voltage V
3
I D = 15 A
Drain current I
4
1
R
V GS = 4.5 V
0.8
V
DS (ON)
I
DS
D
7.5
– V
10
– V
6
DS
GS
– I
1.2
D
D
Common source
Ta = 25°C, pulse test
10
GS
DS
8
(A)
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
V GS = 2.4 V
(V)
(V)
1.6
TPC8013-H
10
2.4 V
2.9
2002-03-25
2.8
2.7
2.6
100
2.0
12