tpc8013-h TOSHIBA Semiconductor CORPORATION, tpc8013-h Datasheet - Page 3

• Manufacturer Part Number: tpc8013-h
• Description: Silicon N Channel Mos Type High Speed U-mos Iii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Gate switch charge
Drain reverse current
Forward voltage (diode)
Characteristics
Characteristics
Rise time
Turn-ON time
Fall time
Turn-OFF time
Pulse
(Note 1)
(Ta = = = = 25°C )
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
Q
I
I
C
I
|Y
C
C
Q
GSS
DSS
DRP
V
t
t
Q
DSF
oss
t
on
off
gs1
SW
rss
t
iss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
Duty < = 1%, t
V
V
V
I
D
D
DR
V
GS
DS
DS
GS
GS
DS
DS
DD
DD
DD
= 10 mA, V
= 10 mA, V
GS
3
(Ta = = = = 25°C)
= 15 A, V
= 30 V, V
= 10 V, I
= 10 V, I
= 10 V, V
~ - 24 V, V
~ - 24 V, V
~ - 24 V, V
= ±16 V, V
= 4.5 V, I
= 10 V, I
10 V
0 V
Test Condition
Test Condition
w
D
D
D
GS
GS
GS
D
GS
GS
= 10 ms
GS
GS
GS
= 1 mA
= 7.5 A
= 7.5 A
DS
= 7.5 A
¾
= 0 V
= 0 V
= -20 V
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
= 5 V, I
= 10 V, I
= 0 V
I
D
V
DD
= 7.5 A
D
~ - 15 V
D
D
= 15 A
= 15 A
= 15 A
V
OUT
12.5
Min
Min
1.1
30
15
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
2380
Typ.
12.2
15.6
Typ.
410
980
6.6
5.4
9.8
7.2
¾
¾
¾
¾
¾
25
21
15
60
46
26
¾
¾
TPC8013-H
2002-03-25
Max
Max
-1.2
±10
2.3
9.5
6.5
10
60
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
Unit
Unit
mW
nC
mA
mA
pF
ns
V
V
S
A
V