tpc8404 TOSHIBA Semiconductor CORPORATION, tpc8404 Datasheet - Page 10

• Manufacturer Part Number: tpc8404
• Description: Toshiba Field Effect Transistor Silicon P, N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

N-ch
0.01
0.1
10
1
1
＊ Single nonrepetitive
Curves must be derated
linealy with increase in
temperature.
Ｉ
Ｄ
Ta=25℃
max(pulse)＊
1000
100
Drain-source voltage
10
0.001
1
0
Safe operating area
Device mounted on a glass-epoxy board (a) (Note 2a)
Device mounted on a glass-epoxy board (b) (Note 2b)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
10
10ms*
0.01
SINGLE-DEVICE VALUE AT
DUAL OPERATION (NOTE 3b)
Ｖ
ＤＳＳ
100
Ｖ
max．
ＤＳ
（Ｖ）
0.1
１ｍｓ*
Pulse width t
1000
r
th
10
− t
1
w
w
R
V
(S)
DD
G
= 25 Ω
1.0
0.8
0.6
0.4
0.2
0.0
= 50 V, L = 1 mH
10
−15 V
15 V
25
Test circuit
CHANNEL TEMPERATURE Tch(℃)
50
100
75
ＥＡＳ－Ｔｃｈ
(4)
(3)
V
C
1000
DD
B
Wave form
VDSS
I
AR
100
2006-12-27
TPC8404
V
125
DS
150