tpc8404 TOSHIBA Semiconductor CORPORATION, tpc8404 Datasheet - Page 6

• Manufacturer Part Number: tpc8404
• Description: Toshiba Field Effect Transistor Silicon P, N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

P-ch
1000
100
2.0
1.5
1.0
0.5
10
−0.1
−80
5
4
3
2
1
0
1
0
0
Common source
V GS = 0 V
f = 1 MHz
Tc = 25°C
Common source
V GS = −10 V
Pulse test
(1)
(2)
(3)
(4)
−0.3
−40
Drain-source voltage V
Device mounted on a glass-epoxy board (a)
Ambient temperature Ta (°C)
Case temperature Tc
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
50
Capacitance – V
Device mounted on a glass-epoxy board (b)
−1
0
R
DS (ON)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
P
D
operation (Note 3b)
t = 10 s
100
−3
40
– Ta
– Tc
−10
80
DS
DS
C oss
(°C)
C iss
C rss
−2 A
150
(V)
I D = −1 A
−30
120
(Note 2a)
(Note 2b)
−100
160
200
6
-
-
-
300
200
100
−100
−10
0.1
0
−1
−5
−4
−3
−2
−1
−80
0
0
0
Common source
Tc = 25°C
Pulse test
Dynamic input/output characteristics
0.2
−40
V
Total gate charge Ｑｇ (ｎＣ）
ＤＳ
−5 V
Drain-source voltage V
V GS = −10 V
Case temperature Tc
5
0.4
−3 V
0
I
DR
0.6
50
V
th
10
– V
40
V
– Tc
ＧＳ
0, 1
100
0.8
DS
Common source
I
Tc=25℃
Pulse test
D
80
=0.9A
DS
V
1.0
Common source
V DS = −10 V
I D = −1 mA
Pulse test
ＤＳ
(°C)
15
=200V
(V)
120
1.2
2006-12-27
TPC8404
20
160
1.4
-25
-20
-16
-12
-8
-4
0