tpc8404 TOSHIBA Semiconductor CORPORATION, tpc8404 Datasheet - Page 4

• Manufacturer Part Number: tpc8404
• Description: Toshiba Field Effect Transistor Silicon P, N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

N-ch
Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Characteristics
Characteristics
Rise time
Turn-ON time
Fall time
Turn-OFF time
Pulse (Note 1)
(Ta = 25°C)
V
R
Symbol
Symbol
(BR) DSS
DS (ON)
V
I
I
C
I
C
|Y
C
Q
Q
GSS
DSS
DRP
V
Q
t
t
Q
DSF
t
oss
on
off
t
t
iss
rss
gd
rr
th
gs
fs
r
f
rr
g
|
V
V
I
V
V
V
V
Duty < = 1%, t
V
I
I
I
dI
D
D
DR
DR
V
GS
DS
DS
GS
DS
DS
DD
DR
GS
= 10 mA, V
= 1.1 A
4
= 1.1 A, V
= 1.1 A, V
(Ta = 25°C)
/dt = 100 A/μs
= ±16 V, V
= 250 V, V
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, V
∼ − 200 V, V
10 V
0 V
Test Condition
Test Condition
w
D
D
V
D
GS
GS
GS
GS
= 10 μs
DD
= 1 mA
= 0.5 A
DS
GS
= 1.1 A
GS
⎯
= 0 V
= 0 V
= 0 V,
= 0 V, f = 1 MHz
∼ − 125 V
= 0 V
= 0 V
= 10 V,
I
D
= 0.5 A
R
250 Ω
L
V
OUT
=
Min
250
Min
1.5
0.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
Typ.
267
100
320
1.2
1.3
32
98
15
10
35
10
⎯
⎯
⎯
⎯
⎯
⎯
6
6
4
2006-12-27
TPC8404
−2.0
Max
Max
4.4
±10
100
⎯
⎯
3.5
1.7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
nC
ns
μA
μA
nC
pF
ns
A
V
Ω
V
V
S