tpc8404 TOSHIBA Semiconductor CORPORATION, tpc8404 Datasheet - Page 7

• Manufacturer Part Number: tpc8404
• Description: Toshiba Field Effect Transistor Silicon P, N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

P-ch
-
-
-
0.01
-
0.1
10
1
-
1
＊ Single nonrepetitive
Curves must be derated
linealy with increase in
temperature.
Ｉ
Ｄ
Ta=25℃
max(pulse)＊
Drain-source voltage
Safe operating area
1000
100
-
10
0.001
1
0
10
Device mounted on a glass-epoxy board (a) (Note 2a)
Device mounted on a glass-epoxy board (b) (Note 2b)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
10ms*
0.01
SINGLE-DEVICE VALUE AT
DUAL OPERATION (NOTE 3b)
Ｖ
-
ＤＳＳ
100
Ｖ
DS
max．
（Ｖ）
１ｍｓ*
0.1
Pulse width t
-
1000
7
r
th
− t
1
w
w
(S)
R
V
1.0
0.8
0.6
0.4
0.2
0.0
G
DD
= 25 Ω
10
25
= −50 V, L = 1 mH
−15 V
15 V
CHANNEL TEMPERATURE Tch(℃)
Test circuit
50
100
75
Ｅ
(4)
(3)
(2)
(1)
Ε AS
ＡＳ
1000
V
－Ｔ
DD
=
B
Wave form
2
1
100
VDSS
I
ｃｈ
⋅
AR
L
2006-12-27
TPC8404
⋅
2 I
⋅
⎛
⎜
⎜
⎝
B VDSS
125
V
DS
B VDSS
−
V DD
150
⎞
⎟
⎟
⎠