tpc6104 TOSHIBA Semiconductor CORPORATION, tpc6104 Datasheet - Page 2

• Manufacturer Part Number: tpc6104
• Description: Toshiba Field Effect Transistor Silicon P Channel Mos Type U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Drain reverse
current
Forward voltage (diode)
Characteristics
Characteristics
Pulse (Note 1)
Rise time
Turn-on time
Fall time
Turn-off time
(Ta = 25°C)
Symbol
V
I
DRP
DSF
V
V
R
R
R
Symbol
(BR) DSS
(BR) DSX
DS (ON)
DS (ON)
DS (ON)
I
I
C
C
|Y
C
Q
Q
GSS
DSS
V
t
t
Q
oss
on
off
t
t
iss
rss
gd
th
gs
I
fs
r
f
g
DR
|
= −5.5 A, V
V
V
I
I
V
V
V
V
V
V
Duty < = 1%, t
V
I
D
D
D
V
GS
DS
DS
GS
GS
GS
DS
DS
DD
= −10 mA, V
= −10 mA, V
GS
= −5.5 A
2
(Ta = 25°C)
= ±8 V, V
= −20 V, V
= −10 V, I
= −1.8 V, I
= −2.5 V, I
= −4.5 V, I
= −10 V, I
= −10 V, V
∼ − −16 V, V
−5 V
Test Condition
GS
0 V
= 0 V
Test Condition
w
—
DS
= 10 μs
D
D
GS
GS
D
D
D
GS
GS
GS
= −200 μA
= −2.8 A
= −1.4 A
= −2.8 A
= −2.8 A
= 0 V
= 0 V
= 8 V
= 0 V
= 0 V, f = 1 MHz
= −5 V,
V
I
D
DD
= −2.8 A
∼ − −10 V
V
OUT
−0.5
Min
−20
−12
Min
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—
—
6
1430
Typ.
Typ.
200
240
8.5
78
49
33
12
15
20
66
19
14
—
—
⎯
⎯
⎯
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5
2006-11-16
TPC6104
−1.2
Max
Max
±10
−10
120
−22
1.2
60
40
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Unit
Unit
mΩ
nC
μA
μA
pF
ns
A
V
V
V
S