tpc6104 TOSHIBA Semiconductor CORPORATION, tpc6104 Datasheet - Page 6

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tpc6104

Manufacturer Part Number
tpc6104
Description
Toshiba Field Effect Transistor Silicon P Channel Mos Type U-mosiii
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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−0.003
−0.001
−0.03
−0.01
−100
−0.3
−0.1
−30
−10
−3
−1
−0.01 −0.03
*: Single nonrepetitive pulse
Curves must be derated
linearly with increase in
temperature
I D max (pulsed)*
Ta = 25°C
Drain-source voltage V
−0.1
1000
300
100
Safe operating area
0.3
0.1
30
10
0.001
3
1
−0.3
10 ms*
−1
−3
0.01
V DSS max
DS
−10
(V)
1 ms*
−30
Device mounted on a glass-
epoxy board (b) (Note 2b)
0.1
−100
Pulse width t
r
th
6
– t
1
w
Device mounted on a glass-
epoxy board (a) (Note 2a)
w
(s)
10
100
Single pulse
1000
2006-11-16
TPC6104

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