tpc6104 TOSHIBA Semiconductor CORPORATION, tpc6104 Datasheet - Page 4

• Manufacturer Part Number: tpc6104
• Description: Toshiba Field Effect Transistor Silicon P Channel Mos Type U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

−10
100
0.3
0.1
−5
−4
−3
−2
−1
−8
−6
−4
−2
30
10
−0.1
0
0
3
1
0
0
Common source
V DS = −10 V
Pulse test
−4
Common source
V DS = −10 V
Pulse test
−5
−0.3
−0.2
−0.5
Drain-source voltage V
Gate-source voltage V
−3
Drain current I
−2.5
100°C
−1
−0.4
100°C
−1
−2
I
I
|Y
D
D
fs
Ta = −55°C
25°C
– V
– V
−1.9
−3
| – I
DS
GS
−0.6
−1.5
D
D
25°C
Common source
Ta = 25°C Pulse test
Ta = −55°C
−10
GS
DS
(A)
V GS = −1.4 V
(V)
(V)
−0.8
−2
−1.8
−30
−1.7
−1.6
−1.5
−100
−1.0
−2.5
4
1000
−0.8
−0.6
−0.4
−0.2
−10
300
100
−8
−6
−4
−2
−1
30
10
−0.1
0
0
0
0
−5
−1.1 A
−2.5
−0.3
−1
−2
Drain-source voltage V
−4
Gate-source voltage V
−2.1
−3
Drain current I
−1
R
−2
V
−4
DS (ON)
I
DS
D
– V
−3
– V
−1.8 V
DS
GS
– I
−3
−6
D
Common source
Ta = 25°C Pulse test
D
−10
GS
DS
(A)
V GS = −4.5 V
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
−2.5 V
V GS = −1.4 V
(V)
(V)
−4
−8
I D = −4.5 A
−30
−2.2 A
2006-11-16
−1.8
−1.6
TPC6104
−2
−100
−10
−5