tpc6104 TOSHIBA Semiconductor CORPORATION, tpc6104 Datasheet - Page 5

• Manufacturer Part Number: tpc6104
• Description: Toshiba Field Effect Transistor Silicon P Channel Mos Type U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
3000
1000
160
120
300
100
2.5
1.5
0.5
80
40
30
10
−0.1
−80
0
2
1
0
0
Common source
Pulse test
−2.5 V
Common source
Ta = 25°C
f = 1 MHz
V GS = 0 V
(1) t = 5 s
(1) DC
(2) t = 5 s
(2) DC
V GS = −1.8 V
−4.5 V
−0.3
−40
Drain-source voltage V
Ambient temperature Ta (
Ambient temperature Ta (
40
Capacitance – V
−1
0
R
DS (ON)
−2.2 A
P
D
I D = −1.1A
−3
40
80
– Ta
(1) Device mounted on a
(2) Device mounted on a
I D = −1.1 A, −2.2 A, −4.5 A
– Ta
glass-epoxy board (a)
(Note 2a)
glass-epoxy board (b)
(Note 2b)
−10
80
DS
DS
I D = −1.1 A, −2.2 A
C oss
C rss
C iss
120
°
°
(V)
C)
C)
−30
120
−4.5 A
−4.5 A
−4.5 A
−100
160
160
5
−100
−2.0
−1.5
−1.0
−0.5
−30
−10
−20
−16
−12
−3
−1
−8
−4
−80
0
0
0
0
Common source
I D = −6 A
Ta = 25°C
Pulse test
−4 V
−8 V
−2.0
Dynamic input/output characteristics
V DD = −16 V
−40
−1.8
0.4
Drain-source voltage V
8
−4
Ambient temperature Ta (
Total gate charge Q
−1
0
0.8
16
I
DR
V
V GS = 0 V
th
– V
40
– Ta
DS
1.2
−4 V
24
g
80
DS
−8 V
V DD = −16 V
(nC)
Common source
V DS = −10 V
I D = −200 μA
Pulse test
Common source
Ta = 25°C
Pulse test
°
(V)
C)
1.6
32
120
V GS
2006-11-16
TPC6104
160
2.0
40
−10
−8
−6
−4
−2
0