k9f5608u0b-yib0 Samsung Semiconductor, Inc., k9f5608u0b-yib0 Datasheet - Page 17

• Manufacturer Part Number: k9f5608u0b-yib0
• Description: 32m X 8 Bit , 16m X 16 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F5608U0B-VCB0,VIB0,FCB0,FIB0
K9F5608Q0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-YCB0,YIB0,PCB0,PIB0
K9F5608U0B-DCB0,DIB0,HCB0,HIB0
Pointer Operation of K9F5608X0B(X8)
Samsung NAND Flash has three address pointer commands as a substitute for the two most significant column addresses. ’00h’
command sets the pointer to ’A’ area(0~255byte), ’01h’ command sets the pointer to ’B’ area(256~511byte), and ’50h’ command sets
the pointer to ’C’ area(512~527byte). With these commands, the starting column address can be set to any of a whole
page(0~527byte). ’00h’ or ’50h’ is sustained until another address pointer command is inputted. ’01h’ command, however, is effec-
tive only for one operation. After any operation of Read, Program, Erase, Reset, Power_Up is executed once with ’01h’ command,
the address pointer returns to ’A’ area by itself. To program data starting from ’A’ or ’C’ area, ’00h’ or ’50h’ command must be input-
ted before ’80h’ command is written. A complete read operation prior to ’80h’ command is not necessary. To program data starting
from ’B’ area, ’01h’ command must be inputted right before ’80h’ command is written.
Table 2. Destination of the pointer
(1) Command input sequence for programming ’A’ area
(2) Command input sequence for programming ’B’ area
(3) Command input sequence for programming ’C’ area
Command
00h
01h
50h
’A’,’B’,’C’ area can be programmed.
It depends on how many data are inputted.
00h
01h
50h
’B’, ’C’ area can be programmed.
It depends on how many data are inputted.
Only ’C’ area can be programmed.
Pointer position
256 ~ 511 byte
512 ~ 527 byte
The address pointer is set to ’A’ area(0~255), and sustained
The address pointer is set to ’B’ area(256~512), and will be reset to
’A’ area after every program operation is executed.
The address pointer is set to ’C’ area(512~527), and sustained
0 ~ 255 byte
80h
80h
80h
Address / Data input
Address / Data input
Address / Data input
2nd half array(B)
1st half array(A)
spare array(C)
K9F5616Q0B-DCB0,DIB0,HCB0,HIB0
K9F5616U0B-YCB0,YIB0,PCB0,PIB0
K9F5616U0B-DCB0,DIB0,HCB0,HIB0
Area
10h
10h
10h
17
00h
’00h’ command can be omitted.
01h
50h
’01h’ command must be rewritten before
every program operation
’50h’ command can be omitted.
Figure 4. Block Diagram of Pointer Operation
Pointer select
commnad
(00h, 01h, 50h)
(00h plane)
"A" area
256 Byte
"A"
80h
80h
80h
Address / Data input
Address / Data input
Address / Data input
(01h plane)
FLASH MEMORY
256 Byte
"B" area
Pointer
"B"
10h
10h
10h
(50h plane)
16 Byte
"C" area
"C"
Page Register
Internal