k9f5608u0b-yib0 Samsung Semiconductor, Inc., k9f5608u0b-yib0 Datasheet - Page 2

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k9f5608u0b-yib0

Manufacturer Part Number
k9f5608u0b-yib0
Description
32m X 8 Bit , 16m X 16 Bit Nand Flash Memory
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
K9F5608U0B-VCB0,VIB0,FCB0,FIB0
K9F5608Q0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-YCB0,YIB0,PCB0,PIB0
K9F5608U0B-DCB0,DIB0,HCB0,HIB0
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
Document Title
Revision History
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
Revision No.
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html
0.5
0.6
0.7
0.8
0.9
History
1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 33)
2. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 34)
The min. Vcc value 1.8V devices is changed.
K9F56XXQ0B : Vcc 1.65V~1.95V --> 1.70V~1.95V
Pb-free Package is added.
K9F5608U0B-FCB0,FIB0
K9F5608Q0B-HCB0,HIB0
K9F5616U0B-HCB0,HIB0
K9F5616U0B-PCB0,PIB0
K9F5616Q0B-HCB0,HIB0
K9F5608U0B-HCB0,HIB0
K9F5608U0B-PCB0,PIB0
New definition of the number of invalid blocks is added.
(Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb
memory
(before) N.C --> (after) Vss
Pin assignment of TBGA A3 ball is changed.
space.)
K9F5616Q0B-DCB0,DIB0,HCB0,HIB0
K9F5616U0B-YCB0,YIB0,PCB0,PIB0
K9F5616U0B-DCB0,DIB0,HCB0,HIB0
2
Draft Date
Nov. 22.2002
Mar. 6.2003
Mar. 13rd 2003
Apr. 4th 2003
May. 24th 2003
FLASH MEMORY
Remark

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