k9f5608u0b-yib0 Samsung Semiconductor, Inc., k9f5608u0b-yib0 Datasheet - Page 18

• Manufacturer Part Number: k9f5608u0b-yib0
• Description: 32m X 8 Bit , 16m X 16 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F5608U0B-VCB0,VIB0,FCB0,FIB0
K9F5608Q0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-YCB0,YIB0,PCB0,PIB0
K9F5608U0B-DCB0,DIB0,HCB0,HIB0
Pointer Operation of K9F5616X0B(X16)
Samsung NAND Flash has two address pointer commands as a substitute for the most significant column address. ’00h’ command
sets the pointer to ’A’ area(0~255word), and ’50h’ command sets the pointer to ’B’ area(256~263word). With these commands, the
starting column address can be set to any of a whole page(0~263word). ’00h’ or ’50h’ is sustained until another address pointer com-
mand is inputted. To program data starting from ’A’ or ’B’ area, ’00h’ or ’50h’ command must be inputted before ’80h’ command is
written. A complete read operation prior to ’80h’ command is not necessary.
Table 3. Destination of the pointer
(1) Command input sequence for programming ’A’ area
(2) Command input sequence for programming ’B’ area
Command
00h
50h
’A’,’B’ area can be programmed.
It depends on how many data are inputted.
00h
50h
Only ’B’ area can be programmed.
Pointer position
256 ~ 263 word
The address pointer is set to ’A’ area(0~255), and sustained
The address pointer is set to ’B’ area(256~263), and sustained
0 ~ 255 word
80h
80h
Address / Data input
Address / Data input
spare array(B)
main array(A)
K9F5616Q0B-DCB0,DIB0,HCB0,HIB0
K9F5616U0B-YCB0,YIB0,PCB0,PIB0
K9F5616U0B-DCB0,DIB0,HCB0,HIB0
Area
10h
10h
18
00h
’00h’ command can be omitted.
50h
’50h’ command can be omitted.
Figure 5. Block Diagram of Pointer Operation
Pointer select
command
(00h, 50h)
(00h plane)
"A" area
256 Word
"A"
80h
80h
Address / Data input
Address / Data input
FLASH MEMORY
Pointer
10h
10h
(50h plane)
8 Word
"B" area
"B"
Page Register
Internal