k9f5608u0b-yib0 Samsung Semiconductor, Inc., k9f5608u0b-yib0 Datasheet - Page 3

• Manufacturer Part Number: k9f5608u0b-yib0
• Description: 32m X 8 Bit , 16m X 16 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

FEATURES
GENERAL DESCRIPTION
K9F5608U0B-VCB0,VIB0,FCB0,FIB0
K9F5608Q0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-YCB0,YIB0,PCB0,PIB0
K9F5608U0B-DCB0,DIB0,HCB0,HIB0
Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0B is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V
Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be
performed in typical 200 s on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in
typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per word.
The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all
program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the
write-intensive systems can take advantage of the K9F56XXX0B s extended reliability of 100K program/erase cycles by providing
ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9F56XXX0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
PRODUCT LIST
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
- Memory Cell Array
- Data Register
- Page Program
- Block Erase :
- Page Size
- Random Access
- Serial Page Access : 50ns(Min.)
Voltage Supply
Organization
Automatic Program and Erase
Page Read Operation
- 1.8V device(K9F56XXQ0B) : 1.70~1.95V
- 3.3V device(K9F56XXU0B) : 2.7 ~ 3.6 V
- X8 device(K9F5608X0B) : (32M + 1024K)bit x 8 bit
- X16 device(K9F5616X0B) : (16M + 512K)bit x 16bit
- X8 device(K9F5608X0B) : (512 + 16)bit x 8bit
- X16 device(K9F5616X0B) : (256 + 8)bit x16bit
- X8 device(K9F5608X0B) : (512 + 16)Byte
- X16 device(K9F5616X0B) : (256 + 8)Word
- X8 device(K9F5608X0B) : (16K + 512)Byte
- X16 device(K9F5616X0B) : ( 8K + 256)Word
- X8 device(K9F5608X0B) : (512 + 16)Byte
- X16 device(K9F5616X0B) : (256 + 8)Word
K9F5608Q0B-D,H
K9F5616Q0B-D,H
K9F5608U0B-Y,P
K9F5608U0B-D,H
K9F5616U0B-Y,P
K9F5616U0B-D,H
K9F5608U0B-V,F
Part Number
: 10 s(Max.)
1.70 ~ 1.95V
Vcc Range
2.7 ~ 3.6V
K9F5616Q0B-DCB0,DIB0,HCB0,HIB0
K9F5616U0B-YCB0,YIB0,PCB0,PIB0
K9F5616U0B-DCB0,DIB0,HCB0,HIB0
3
- Program time : 200 s(Typ.)
- Block Erase Time : 2ms(Typ.)
- Program/Erase Lockout During Power Transitions
- Endurance
- Data Retention : 10 Years
- K9F56XXU0B-YCB0/YIB0
- K9F56XXX0B-DCB0/DIB0
- K9F5608U0B-VCB0/VIB0
- K9F56XXU0B-PCB0/PIB0
- K9F56XXX0B-HCB0/HIB0
- K9F5608U0B-FCB0/FIB0
Fast Write Cycle Time
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
Reliable CMOS Floating-Gate Technology
Command Register Operation
Intelligent Copy-Back
Unique ID for Copyright Protection
Package
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
48 - Pin WSOP I (12X17X0.7mm)
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - Pb-free Package
63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
48 - Pin WSOP I (12X17X0.7mm) - Pb-free Package
- Pb-free Package
* K9F5608U0B-V,F(WSOPI ) is the same device as
K9F5608U0B-Y,P(TSOP1) except package type.
Organization
X16
X16
X8
X8
: 100K Program/Erase Cycles
FLASH MEMORY
PKG Type
WSOP1
TSOP1
TSOP1
TBGA
TBGA
TBGA