k9f5608u0c Samsung Semiconductor, Inc., k9f5608u0c Datasheet - Page 19

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k9f5608u0c

Manufacturer Part Number
k9f5608u0c
Description
32m X 8 Bit 16m X 16 Bit Nand Flash Memory
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

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Pointer Operation of K9F5616X0C(X16)
Samsung NAND Flash has two address pointer commands as a substitute for the most significant column address. ’00h’ command
sets the pointer to ’A’ area(0~255word), and ’50h’ command sets the pointer to ’B’ area(256~263word). With these commands, the
starting column address can be set to any of a whole page(0~263word). ’00h’ or ’50h’ is sustained until another address pointer com-
mand is inputted. To program data starting from ’A’ or ’B’ area, ’00h’ or ’50h’ command must be inputted before ’80h’ command is
written. A complete read operation prior to ’80h’ command is not necessary.
Table 3. Destination of the pointer
K9F5608Q0C
K9F5608D0C
K9F5608U0C
(1) Command input sequence for programming ’A’ area
(2) Command input sequence for programming ’B’ area
Command
00h
50h
’A’,’B’ area can be programmed.
It depends on how many data are inputted.
00h
50h
Only ’B’ area can be programmed.
Pointer position
256 ~ 263 word
The address pointer is set to ’A’ area(0~255), and sustained
The address pointer is set to ’B’ area(256~263), and sustained
0 ~ 255 word
K9F5616Q0C
K9F5616U0C
K9F5616D0C
80h
80h
Address / Data input
Address / Data input
spare array(B)
main array(A)
Area
10h
10h
Figure 5. Block Diagram of Pointer Operation
19
Pointer select
command
(00h, 50h)
00h
’00h’ command can be omitted.
50h
’50h’ command can be omitted.
(00h plane)
"A" area
256 Word
"A"
80h
80h
Pointer
Address / Data input
Address / Data input
FLASH MEMORY
(50h plane)
8 Word
"B" area
"B"
10h
10h
Page Register
Internal

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