k9f5608u0c Samsung Semiconductor, Inc., k9f5608u0c Datasheet - Page 41

• Manufacturer Part Number: k9f5608u0c
• Description: 32m X 8 Bit 16m X 16 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

Data Protection & Power up sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.1V(1.8V device), 1.8V(2.65V device), 2V(3.3V device). WP pin provides hard-
ware protection and is recommended to be kept at V
required before internal circuit gets ready for any command sequences as shown in Figure 18. The two step command sequence for
program/erase provides additional software protection.
Figure 18. AC Waveforms for Power Transition
K9F5608Q0C
K9F5608D0C
K9F5608U0C
WP
WE
V
CC
2.65V device : ~ 2.0V
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V
K9F5616Q0C
K9F5616U0C
K9F5616D0C
10 s
High
IL
during power-up and power-down and recovery time of minimum 10 s is
41
FLASH MEMORY
2.65V device : ~ 2.0V
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V