h55s1g62mfp-60 Hynix Semiconductor, h55s1g62mfp-60 Datasheet - Page 11

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h55s1g62mfp-60

Manufacturer Part Number
h55s1g62mfp-60
Description
64mx16bit Mobile Sdram
Manufacturer
Hynix Semiconductor
Datasheet

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DC CHARACTERISTICS III
1. VDD / VDDQ = 1.8V
2. Related numerical values in this 45
3. With a on-chip temperature sensor of Mobile memory, auto temperature compensated self refresh will
Rev 1.2 / Jul. 2008
automatically adjust the interval of self-refresh operation according to ambient temperature variations.
Temp.
(
45
85
o
C)
4 Banks
450
900
- Low Power (I
o
C are examples for reference sample value only.
DD6
Memory Array
)
2 Banks
350
650
1Gbit (64Mx16bit) Mobile SDR Memory
1 Bank
300
500
H55S1G62MFP Series
Unit
uA
uA
11
11

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