h55s1g62mfp-60 Hynix Semiconductor, h55s1g62mfp-60 Datasheet - Page 12

• Manufacturer Part Number: h55s1g62mfp-60
• Description: 64mx16bit Mobile Sdram
• Manufacturer: Hynix Semiconductor

AC CHARACTERISTICS I
Notes :
1. Assume t
2. Access time to be measured with input signals of 1V/ns edge rate, from 0.8V to 0.2V. If t
3. Output Load : 30pF+No termination
●
●
●
●
Rev 1.2 / Jul. 2008
System Clock
Cycle Time
Clock High Pulse Width
Clock Low Pulse Width
Access Time From Clock CAS Latency=3
Data-out Hold Time
Data-Input Setup Time
Data-Input Hold Time
Address Setup Time
Address Hold Time
CKE Setup Time
CKE Hold Time
Command Setup Time
Command Hold Time
CLK to Data Output in Low-Z Time
CLK to Data Output in
High-Z Time
then (t
AC high level input voltage / low level input voltage : 1.6 / 0.2V
Output timing measurement reference level : 0.9V
Input timing measurement reference level : 0.9V
Transition time (input rise and fall time) : 0.5ns
R
/2-0.5)ns should be added to the parameter.
R
/ t
F
(input rise and fall time) is 1ns. If t
Parameter
CAS Latency=3
CAS Latency=2
CAS Latency=2
CAS Latency=3
CAS Latency=2
(AC operating conditions unless otherwise noted)
R
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Symbol
CK3
CK2
CHW
CLW
AC3
AC2
OH
DS
DH
AS
AH
CKS
CKH
CS
CH
OLZ
OHZ3
OHZ2
& t
F
> 1ns, then [(t
Min
6.0
2.0
2.0
2.0
2.6
2.0
1.0
2.0
1.0
2.0
1.0
2.0
1.0
1.0
12
166MHz
-
Output
1Gbit (64Mx16bit) Mobile SDR Memory
R
Max
1000
1000
6.0
5.4
6.0
5.4
+t
-
-
-
-
-
-
-
-
-
-
-
-
Output Load
F
Z = 50
)/2-1]ns should be added to the parameter.
Ω
Min
7.5
2.5
2.5
2.6
2.0
1.0
2.0
1.0
2.0
1.0
2.0
1.0
1.0
12
133MHz
-
-
30pF
Max
1000
1000
R
6.0
8.0
6.0
8.0
> 1ns,
-
-
-
-
-
-
-
-
-
-
-
-
CLK
Input
Output
H55S1G62MFP Series
Min
9.5
3.0
3.0
2.6
3.0
1.5
3.0
1.5
3.0
1.5
3.0
1.5
1.0
1.6V
0.9V
0.2V
1.6V
0.9V
0.2V
15
105MHz
-
-
t
1000
1000
Max
SETUP
7.0
7.0
10
10
-
-
-
-
-
-
-
-
-
-
-
-
t
OH
t
HOLD
t
t
AC
CH
Unit Note
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
CK
t
CL
2, 3
2, 3
11
1
1
3
1
1
1
1
1
1
1
1
12