h55s1g62mfp-60 Hynix Semiconductor, h55s1g62mfp-60 Datasheet - Page 9

• Manufacturer Part Number: h55s1g62mfp-60
• Description: 64mx16bit Mobile Sdram
• Manufacturer: Hynix Semiconductor

CAPACITANCE
DC CHARACTERRISTICS I
Notes :
1. VIN = 0 to 1.8V. All other pins are not tested under VIN=0V.
2. DOUT is disabled. VOUT= 0 to 1.95V.
3. IOUT = - 0.1mA
4. IOUT = + 0.1mA
Rev 1.2 / Jul. 2008
Input capacitance
Data input/output capacitance
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Parameter
Parameter
(T
A
= 25
o
C, f=1MHz)
Symbol
(T
V
V
I
I
A
LO
OH
LI
OL
= -30 to 85
A0~A13, BA0, BA1, CKE, CS, RAS,
CAS, WE, UDQM, LDQM
DQ0 ~ DQ15
o
C)
0.9*V
CLK
Pin
Min
-1.5
-1
-
DDQ
1Gbit (64Mx16bit) Mobile SDR Memory
0.1*V
Max
1.5
1
-
DDQ
Symbol
CI/O
CI1
CI2
H55S1G62MFP Series
Min
1.5
1.5
2.0
A3/75/60
Unit
uA
uA
V
V
Max
3.5
3.0
4.5
Note
Unit
1
2
3
4
pF
pF
pF
11
9