ST10F272M-4Q3 STMICROELECTRONICS [STMicroelectronics], ST10F272M-4Q3 Datasheet - Page 130

• Manufacturer Part Number: ST10F272M-4Q3
• Description: 16-bit MCU with 256 Kbyte Flash memory and 20 Kbyte RAM
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Electrical characteristics
24.6
Table 57.
1. The figures are given after about 100 cycles due to testing routines (0 cycles at the final customer).
2. Word and Double Word Programming times are provided as average values derived from a full sector programming time:
3. Bank Erase is obtained through a multiple Sector Erase operation (setting bits related to all sectors of the Bank). As
4. Not 100% tested, guaranteed by Design Characterization.
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Word Program (32-bit)
Double Word Program (64-bit)
Bank 0 Program (256 Kbyte)
(Double Word Program)
Sector Erase (8 Kbyte)
Sector Erase (32 Kbyte)
Sector Erase (64 Kbyte)
Bank 0 Erase (256 Kbyte)
Recovery from Power-Down (t
Program Suspend Latency
Erase Suspend Latency
Erase Suspend Request Rate
Set Protection
absolute value of a Word or Double Word Programming time could be longer than the average value.
ST10F272M implements only one bank, the Bank Erase operation is equivalent to Module and Chip Erase operations.
Parameter
Flash characteristics
V
Flash characteristics
(4)
DD
= 5V ± 10%, V
(2)
(4)
(3)
(4)
(4)
(2)
PD
)
SS
0 cycles
T
= 0V
Typical
A
= 25°C
1.6
0.6
0.5
1.1
0.8
1.7
1.3
5.6
4.0
35
60
20
40
–
–
–
(1)
0 cycles
13.6
11.9
150
2.0
0.9
0.8
2.0
1.8
3.7
3.3
80
40
10
30
20
90
T
Maximum
A
(1)
= 125°C
100k cycles
19.2
17.5
290
570
300
3.9
1.0
0.9
2.7
2.5
5.1
4.7
20
40
10
30
Unit
ms
µs
µs
µs
µs
µs
µs
s
s
s
s
s
–
–
–
not preprogrammed
preprogrammed
not preprogrammed
preprogrammed
not preprogrammed
preprogrammed
not preprogrammed
preprogrammed
(4)
–
–
Minimum delay between
two requests
–
Notes
ST10F272M