ST10F272M-4Q3 STMICROELECTRONICS [STMicroelectronics], ST10F272M-4Q3 Datasheet - Page 32

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ST10F272M-4Q3

Manufacturer Part Number
ST10F272M-4Q3
Description
16-bit MCU with 256 Kbyte Flash memory and 20 Kbyte RAM
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
Internal Flash memory
5.4.5
5.4.6
32/176
Table 11.
Flash data register 0 low (FDR0L)
During program operations, the Flash Address Registers (FARH/L) are used to store the
Flash address in which to program and the Flash Data Registers (FDR1H/L-FDR0H/L) are
used to store the Flash data to program.
FDR0L (0x08 0008)
Table 12.
Flash data register 0 high (FDR0H)
FDR0H (0x08 000A)
Table 13.
DIN15 DIN14 DIN13 DIN12 DIN11 DIN10 DIN9 DIN8 DIN7 DIN6 DIN5 DIN4 DIN3 DIN2 DIN1 DIN0
DIN31 DIN30 DIN29 DIN28 DIN27 DIN26 DIN25 DIN24 DIN23 DIN22 DIN21 DIN20 DIN19 DIN18 DIN17 DIN16
15:0 DIN[15:0]
15:0 DIN[31:16]
RW
RW
ERR
Bit
Bit
15
15
1
0
0
RW
RW
14
14
Name
Name
SUSP
1
0
-
RW
RW
Banks (BxS) and sectors (BxFy) status bits meaning
Flash data register 0 low
Flash data register 0 high
13
13
Erase Error in Bank0
Erase Suspended in Bank0
Don’t care
Data Input 15:0
These bits must be written with the Data to program the Flash with the following
operations: Word Program (32-bit), Double Word Program (64-bit) and Set
Protection.
Data Input 31:16
These bits must be written with the Data to program the Flash with the following
operations: Word Program (32-bit), Double Word Program (64-bit) and Set
Protection.
RW
RW
12
12
RW
RW
11
11
B0S = 1 meaning
RW
RW
10
10
RW
RW
9
9
FCR
FCR
RW
RW
8
8
RW
RW
7
7
Function
Function
RW
RW
Erase Error in Sector y of Bank0
Erase Suspended in Sector y of Bank0
Don’t care
6
6
RW
RW
5
5
B0Fy = 1 meaning
RW
RW
4
4
RW
RW
3
3
Reset value: FFFFh
Reset value: FFFFh
RW
RW
2
2
ST10F272M
RW
RW
1
1
RW
RW
0
0

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