FQB4N90 FAIRCHILD [Fairchild Semiconductor], FQB4N90 Datasheet - Page 3

• Manufacturer Part Number: FQB4N90
• Description: 900V N-Channel MOSFET
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
1500
1200
900
600
300
10
10
10
10
0
-1
8
6
4
2
0
1
0
10
10
0
-1
Figure 5. Capacitance Characteristics
Top :
Bottom : 5.5 V
-1
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
3
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
10
10
, Drain Current [A]
0
0
C
C
C
oss
rss
iss
6
V
GS
= 20V
C
C
C
iss
oss
rss
V
= C
= C
※ Notes :
= C
※ Note : T
GS
10
1. 250μ s Pulse Test
2. T
10
gs
9
gd
ds
1
= 10V
1
+ C
C
+ C
= 25℃
gd
gd
※ Notes :
(C
1. V
2. f = 1 MHz
J
ds
= 25℃
= shorted)
GS
= 0 V
12
10
10
10
10
10
10
12
10
-1
-1
1
0
1
0
8
6
4
2
0
0.2
2
0
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
Variation vs. Source Current and
0.4
5
150℃
4
25℃
V
V
Q
150℃
GS
SD
0.6
G
V
10
, Source-Drain Voltage [V]
V
, Gate-Source Voltage [V]
, Total Gate Charge [nC]
V
DS
DS
Temperature
DS
= 720V
= 450V
= 180V
25℃
0.8
15
6
-55℃
1.0
20
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
GS
= 50V
= 0V
1.2
25
D
= 4.2 A
Rev. B, October 2001
1.4
30
10