FQB4N90 FAIRCHILD [Fairchild Semiconductor], FQB4N90 Datasheet - Page 4

• Manufacturer Part Number: FQB4N90
• Description: 900V N-Channel MOSFET
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
10
10
10
10
10
-100
-1
-2
Figure 9. Maximum Safe Operating Area
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
V
vs. Temperature
J
DS
10
, Junction Temperature [
0
, Drain-Source Voltage [V]
1
※ Notes :
1 0
1 0
1 0
Operation in This Area
is Limited by R
1. T
2. T
3. Single Pulse
- 1
- 2
1 0
0
C
J
= 150
= 25
- 5
0 .0 5
o
D = 0 .5
0 .0 2
0 .0 1
0 .1
C
o
0 .2
50
C
DS(on)
Figure 11. Transient Thermal Response Curve
10
DC
2
100
1 0
(Continued)
o
10 ms
C]
- 4
s i n g le p u ls e
※ Notes :
1 ms
t
1. V
2. I
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
G S
= 250 μ A
150
= 0 V
100 s
1 0
10
3
- 3
200
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
5
4
3
2
1
0
25
※ N o te s :
Figure 8. On-Resistance Variation
1 0
Figure 10. Maximum Drain Current
1 . Z
2 . D u ty F a c to r , D = t
3 . T
- 1
P
-50
θ
J M
DM
J C
- T
50
( t) = 0 .8 9 ℃ / W M a x .
vs. Case Temperature
C
= P
T
vs. Temperature
J
T
t
, Junction Temperature [
1
D M
C
0
t
1 0
, Case Temperature [ ℃ ]
2
* Z
0
75
1
θ J C
/t
2
( t)
50
100
1 0
1
100
o
C]
125
※ Notes :
1. V
2. I
150
D
GS
= 2.1 A
= 10 V
Rev. B, October 2001
150
200