NTB30N20T4 ONSEMI [ON Semiconductor], NTB30N20T4 Datasheet - Page 2
NTB30N20T4
Manufacturer Part Number
NTB30N20T4
Description
Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode D2PAK
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
1.NTB30N20T4.pdf
(8 pages)
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3. Indicates Pulse Test: P. W. = 300 s max, Duty Cycle = 2%.
4. Switching characteristics are independent of operating junction temperature.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Notes 3 & 4)
BODY−DRAIN DIODE RATINGS (Note 3)
Drain−to−Source Breakdown Voltage
Temperature Coefficient (Positive)
Zero Gate Voltage Collector Current
Gate−Body Leakage Current (V
Gate Threshold Voltage
Temperature Coefficient (Negative)
Static Drain−to−Source On−State Resistance
Drain−to−Source On−Voltage
Forward Transconductance (V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
Forward On−Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(V
(V
(V
V
(V
(V
(V
(V
DS
GS
GS
GS
GS
GS
GS
GS
= V
= 0 Vdc, I
= 0 Vdc, V
= 0 Vdc, V
= 10 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
GS,
I
D
= 250 Adc)
D
DS
DS
D
D
D
D
= 250 Adc)
= 15 Adc)
= 10 Adc)
= 15 Adc, T
= 30 Adc)
= 200 Vdc, T
= 200 Vdc, T
DS
Characteristic
GS
J
= 15 Vdc, I
= 175 C)
J
J
= 30 Vdc, V
(V
= 25 C)
= 175 C)
(V
(V
(V
(I
DS
DS
DS
DS
S
(T
= 30 Adc, V
= 160 Vdc, V
= 25 Vdc, V
= 25 Vdc, V
= 25 Vdc, V
C
(V
(V
(V
(V
V
V
(I
(I
(I
= 25 C unless otherwise noted)
D
DD
GS
GS
DD
DS
DS
GS
S
S
= 15 Adc)
= 30 Adc, V
= 30 Adc, V
= 100 Vdc, I
= 160 Vdc, I
= 160 Vdc, I
= 160 Vdc, I
= 5.0 Vdc, R
dI
dI
DS
= 10 Vdc, R
30 Ad
V
V
V
V
S
S
GS
GS
GS
/dt = 100 A/ s)
/dt = 100 A/ s)
= 0)
GS
GS
GS
GS
GS
= 5 0 Vdc)
= 5.0 Vdc)
= 10 Vdc)
= 0 Vdc, T
10 Vdc)
= 0 Vdc, f = 1.0 MHz)
= 0 Vdc, f = 1.0 MHz)
= 0 Vdc, f = 1.0 MHz)
http://onsemi.com
V
= 0 Vdc, f = 1.0 MHz)
,
GS
GS
D
D
D
D
G
NTB30N20
G
G
= 18 Adc,
= 30 Adc,
= 30 Adc,
= 18 Adc,
= 0 Vdc)
= 0 Vdc,
= 9.1 )
= 2.5 )
0 Vd
J
2
= 150 C)
)
V
Symbol
R
V
V
(BR)DSS
t
t
I
I
C
Q
DS(on)
DS(on)
C
V
GS(th)
C
Q
Q
Q
g
d(on)
d(off)
DSS
GSS
t
t
t
FS
oss
t
t
SD
rss
RR
iss
rr
a
b
tot
gs
gd
r
f
Min
200
2.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.068
0.067
0.200
2335
−8.9
0.91
0.80
1.85
Typ
307
380
148
230
140
2.9
2.0
20
75
10
12
20
70
40
82
24
88
75
48
20
16
32
85
−
−
−
−
0.081
0.080
0.240
Max
125
100
5.0
4.0
2.5
1.1
100
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mV/ C
mV/ C
Mhos
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
nC
Adc
pF
ns
ns
C