NTB30N20T4 ONSEMI [ON Semiconductor], NTB30N20T4 Datasheet - Page 2

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NTB30N20T4

Manufacturer Part Number
NTB30N20T4
Description
Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode D2PAK
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet

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3. Indicates Pulse Test: P. W. = 300 s max, Duty Cycle = 2%.
4. Switching characteristics are independent of operating junction temperature.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Notes 3 & 4)
BODY−DRAIN DIODE RATINGS (Note 3)
Drain−to−Source Breakdown Voltage
Temperature Coefficient (Positive)
Zero Gate Voltage Collector Current
Gate−Body Leakage Current (V
Gate Threshold Voltage
Temperature Coefficient (Negative)
Static Drain−to−Source On−State Resistance
Drain−to−Source On−Voltage
Forward Transconductance (V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
Forward On−Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(V
(V
(V
V
(V
(V
(V
(V
DS
GS
GS
GS
GS
GS
GS
GS
= V
= 0 Vdc, I
= 0 Vdc, V
= 0 Vdc, V
= 10 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
GS,
I
D
= 250 Adc)
D
DS
DS
D
D
D
D
= 250 Adc)
= 15 Adc)
= 10 Adc)
= 15 Adc, T
= 30 Adc)
= 200 Vdc, T
= 200 Vdc, T
DS
Characteristic
GS
J
= 15 Vdc, I
= 175 C)
J
J
= 30 Vdc, V
(V
= 25 C)
= 175 C)
(V
(V
(V
(I
DS
DS
DS
DS
S
(T
= 30 Adc, V
= 160 Vdc, V
= 25 Vdc, V
= 25 Vdc, V
= 25 Vdc, V
C
(V
(V
(V
(V
V
V
(I
(I
(I
= 25 C unless otherwise noted)
D
DD
GS
GS
DD
DS
DS
GS
S
S
= 15 Adc)
= 30 Adc, V
= 30 Adc, V
= 100 Vdc, I
= 160 Vdc, I
= 160 Vdc, I
= 160 Vdc, I
= 5.0 Vdc, R
dI
dI
DS
= 10 Vdc, R
30 Ad
V
V
V
V
S
S
GS
GS
GS
/dt = 100 A/ s)
/dt = 100 A/ s)
= 0)
GS
GS
GS
GS
GS
= 5 0 Vdc)
= 5.0 Vdc)
= 10 Vdc)
= 0 Vdc, T
10 Vdc)
= 0 Vdc, f = 1.0 MHz)
= 0 Vdc, f = 1.0 MHz)
= 0 Vdc, f = 1.0 MHz)
http://onsemi.com
V
= 0 Vdc, f = 1.0 MHz)
,
GS
GS
D
D
D
D
G
NTB30N20
G
G
= 18 Adc,
= 30 Adc,
= 30 Adc,
= 18 Adc,
= 0 Vdc)
= 0 Vdc,
= 9.1 )
= 2.5 )
0 Vd
J
2
= 150 C)
)
V
Symbol
R
V
V
(BR)DSS
t
t
I
I
C
Q
DS(on)
DS(on)
C
V
GS(th)
C
Q
Q
Q
g
d(on)
d(off)
DSS
GSS
t
t
t
FS
oss
t
t
SD
rss
RR
iss
rr
a
b
tot
gs
gd
r
f
Min
200
2.0
0.068
0.067
0.200
2335
−8.9
0.91
0.80
1.85
Typ
307
380
148
230
140
2.9
2.0
20
75
10
12
20
70
40
82
24
88
75
48
20
16
32
85
0.081
0.080
0.240
Max
125
100
5.0
4.0
2.5
1.1
100
mV/ C
mV/ C
Mhos
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
nC
Adc
pF
ns
ns
C

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