NTB30N20T4 ONSEMI [ON Semiconductor], NTB30N20T4 Datasheet - Page 6

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NTB30N20T4

Manufacturer Part Number
NTB30N20T4
Description
Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode D2PAK
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
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Manufacturer:
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Quantity:
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1000
100
0.1
10
1
0.1
0.01
1.0
0.1
V
SINGLE PULSE
T
Figure 11. Maximum Rated Forward Biased
0.00001
C
GS
V
= 25 C
DS
0.02
0.05
D = 0.5
0.1
= 20 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.2
1.0
SINGLE PULSE
Safe Operating Area
0.01
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
0.0001
10
LIMIT
Figure 14. Diode Reverse Recovery Waveform
I
S
Figure 13. Thermal Response
100
0.001
SAFE OPERATING AREA
t
p
dc
10 s
100 s
1 ms
10 ms
http://onsemi.com
1000
NTB30N20
di/dt
t
t, TIME ( s)
a
P
6
(pk)
t
rr
t
0.01
DUTY CYCLE, D = t
b
I
500
400
300
200
100
S
t
0.25 I
0
1
25
t
Figure 12. Maximum Avalanche Energy versus
2
S
T
J
, STARTING JUNCTION TEMPERATURE ( C)
50
Starting Junction Temperature
TIME
1
0.1
/t
2
75
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
JC
(t) = r(t) R
− T
100
C
= P
(pk)
1.0
JC
1
125
R
JC
(t)
I
D
150
= 30 A
10
175

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