NTB30N20T4 ONSEMI [ON Semiconductor], NTB30N20T4 Datasheet - Page 3

• Manufacturer Part Number: NTB30N20T4
• Description: Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode D2PAK
• Manufacturer: ONSEMI [ON Semiconductor]

0.15
0.05
0.2
0.1
2.5
1.5
0.5
60
50
40
30
20
10
0
0
3
2
1
0
−50
0
5
Figure 3. On−Resistance versus Drain Current
I
V
D
−25
V
GS
V
GS
= 15 A
Figure 5. On−Resistance Variation with
DS
= 10 V
Figure 1. On−Region Characteristics
= 10 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
15
T
2
J
0
, JUNCTION TEMPERATURE ( C)
I
9 V
D
V
, DRAIN CURRENT (AMPS)
GS
T
25
J
and Temperature
T
25
= 10 V
= 100 C
T
J
Temperature
J
4
= 25 C
= −55 C
50
35
7 V
75
6
8 V
100
6 V
45
125
T
8
J
4 V
5 V
= 25 C
150
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55
NTB30N20
175
10
3
100000
10000
1000
0.09
0.08
0.07
0.06
0.05
100
0.1
60
50
40
30
20
10
10
0
0
5
0
20
Figure 4. On−Resistance versus Drain Current
V
V
Figure 6. Drain−to−Source Leakage Current
DS
T
GS
J
V
40
V
= 25 C
GS
DS
= 0 V
T
Figure 2. Transfer Characteristics
10 V
15
J
, GATE−TO−SOURCE VOLTAGE (VOLTS)
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= 100 C
2
60
T
V
J
I
D
GS
= 25 C
, DRAIN CURRENT (AMPS)
= 10 V
and Gate Voltage
80
25
versus Voltage
T
4
J
V
100
T
= 100 C
GS
J
= 175 C
= 15 V
T
35
J
120
= −55 C
6
140
45
160
8
180
55
200
10