S29GL-P_12 SPANSION [SPANSION], S29GL-P_12 Datasheet - Page 52
S29GL-P_12
Manufacturer Part Number
S29GL-P_12
Description
1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
Manufacturer
SPANSION [SPANSION]
Datasheet
1.S29GL-P_12.pdf
(81 pages)
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52
Note
Base = Base Address.
Note
Base = Base Address.
/* Example: Program Command */
*( (UINT16 *)base_addr + 0x555 ) = 0x00AA; /* write unlock cycle 1 */
*( (UINT16 *)base_addr + 0x2AA ) = 0x0055; /* write unlock cycle 2 */
*( (UINT16 *)base_addr + 0x555 ) = 0x00A0; /* write program setup command */
*( (UINT16 *)pa ) = data; /* write data to be programmed */
/* Poll for program completion */
/* Example: SecSi Sector Exit Command */
*( (UINT16 *)base_addr + 0x555 ) = 0x00AA;
*( (UINT16 *)base_addr + 0x2AA ) = 0x0055;
*( (UINT16 *)base_addr + 0x555 ) = 0x0090;
*( (UINT16 *)base_addr + 0x000 ) = 0x0000;
Unlock Cycle 1
Unlock Cycle 2
Program Setup
Unlock Cycle 1
Unlock Cycle 2
Exit Cycle 3
Exit Cycle 4
Program
Cycle
Cycle
S29GL-P MirrorBit
Table 10.3 Secured Silicon Sector Program
Table 10.4 Secured Silicon Sector Exit
(LLD Function = lld_SecSiSectorExitCmd)
Operation
Operation
(LLD Function = lld_ProgramCmd)
Write
Write
Write
Write
Write
Write
Write
Write
D a t a
®
Flash Family
/* write unlock cycle 1
/* write unlock cycle 2
/* write SecSi Sector Exit cycle 3 */
/* write SecSi Sector Exit cycle 4 */
S h e e t
Byte Address
Byte Address
Word Address
Base + AAAh
Base + AAAh
Base + AAAh
Base + AAAh
Base + XXXh
Base + 555h
Base + 555h
S29GL-P_00_A14 October 22, 2012
Word Address
Word Address
Word Address
Base + XXXh
Base + 2AAh
Base + 2AAh
Base + 555h
Base + 555h
Base + 555h
Base + 555h
*/
*/
Data Word
00AAh
00A0h
00AAh
0055h
0055h
0090h
0000h
Data
Data
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