S29GL-P_12 SPANSION [SPANSION], S29GL-P_12 Datasheet - Page 66

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S29GL-P_12

Manufacturer Part Number
S29GL-P_12
Description
1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
Manufacturer
SPANSION [SPANSION]
Datasheet
Notes
1.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. D
4. Waveforms are for the word mode.
66
Figure 11.15
Addresses
RESET#
RY/BY#
indicates last two bus cycles of a program or erase operation.
WE#
Data
OE#
CE#
t
RH
555 for program
2AA for erase
Figure 11.15 Alternate CE# Controlled Write (Erase/Program) Operation Timings
t
t
t
WS
WH
WC
A0 for program
55 for erase
t
GHEL
t
t
t
DS
CP
PA for program
SA for sector erase
555 for chip erase
CPH
t
AS
t
S29GL-P MirrorBit
DH
OUT
is the data written to the device.
t
AH
PD for program
30 for sector erase
10 for chip erase
t
BUSY
D a t a
®
t
Flash Family
WHWH1 or 2
Data# Polling
S h e e t
DQ7#
PA
S29GL-P_00_A14 October 22, 2012
D
OUT

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