M29DW323DB70ZE1E NUMONYX [Numonyx B.V], M29DW323DB70ZE1E Datasheet
M29DW323DB70ZE1E
Related parts for M29DW323DB70ZE1E
M29DW323DB70ZE1E Summary of contents
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Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) FEATURES SUMMARY ■ SUPPLY VOLTAGE – 2.7V to 3.6V for Program, Erase CC and Read – V =12V for Fast Program (optional) PP ■ ACCESS TIME: ...
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M29DW323DT, M29DW323DB TABLE OF CONTENTS FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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Read CFI Query Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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M29DW323DT, M29DW323DB Figure 13.Write AC Waveforms, Chip Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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Table 33. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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M29DW323DT, M29DW323DB SUMMARY DESCRIPTION The M29DW323D Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be per- formed using a single low voltage (2.7 to 3.6V) supply. On ...
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Figure 3. TSOP Connections V PP /WP A15 1 48 A14 A13 A12 A11 A10 A9 A8 A19 M29DW323DT A20 M29DW323DB A18 A17 ...
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M29DW323DT, M29DW323DB Figure 4. TFBGA48 Connections (Top view through package Table 2. Bank Architecture Bank Bank Size A 8 Mbit B 24 Mbit 8/ ...
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Figure 5. Block Addresses (x8) Top Boot Block (x8) Address lines A20-A0, DQ15A-1 000000h 64 KByte or 32 KWord 00FFFFh Bank B 2F0000h 64 KByte or 32 KWord 2FFFFFh 300000h 64 KByte or 32 KWord 30FFFFh 3E0000h 64 KByte or ...
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M29DW323DT, M29DW323DB Figure 6. Block Addresses (x16) Top Boot Block (x16) Address lines A20-A0 000000h 64 KByte or 32 KWord 007FFFh Bank B 178000h 64 KByte or 32 KWord 17FFFFh 180000h 64 KByte or 32 KWord 187FFFh 1F0000h 64 KByte ...
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SIGNAL DESCRIPTIONS See Figure 2., Logic Diagram, 1., Signal Names, for a brief overview of the sig- nals connected to this device. Address Inputs (A0-A20). The Address Inputs select the cells in the memory array to access dur- ing Bus ...
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M29DW323DT, M29DW323DB operation. During Program or Erase operations Ready/Busy is Low Ready/Busy is high-im- OL pedance during Read mode, Auto Select mode and Erase Suspend mode. After a Hardware Reset, Bus Read and Bus Write operations cannot begin ...
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BUS OPERATIONS There are five standard bus operations that control the device. These are Bus Read, Bus Write, Out- put Disable, Standby and Automatic Standby. The Dual Bank architecture of the M29DW323 al- lows read/write operations in Bank A, while ...
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M29DW323DT, M29DW323DB Table 3. Bus Operations, BYTE = V Operation E Bus Read V IL Bus Write V IL Output Disable X V Standby IH Read Manufacturer V IL Code V Read Device Code IL Extended Memory V IL Block ...
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COMMAND INTERFACE All Bus Write operations to the memory are inter- preted by the Command Interface. Commands consist of one or more sequential Bus Write oper- ations. Failure to observe a valid sequence of Bus Write operations will result in ...
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M29DW323DT, M29DW323DB Fast Program Commands There are two Fast Program commands available to improve the programming throughput, by writing several adjacent words or bytes in parallel. The Quadruple Byte Program command is available for x8 operations, while the Double Word ...
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Chip Erase Command The Chip Erase command can be used to erase the entire chip. Six Bus Write operations are re- quired to issue the Chip Erase Command and start the Program/Erase Controller. If any blocks are protected then these ...
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M29DW323DT, M29DW323DB Erase Resume Command The Erase Resume command must be used to re- start the Program/Erase Controller after an Erase Suspend. The device must be in Read Array mode before the Resume command will be accepted. An erase can ...
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Table 6. Commands, 8-bit mode, BYTE = V Command Add 1 Read/Reset 3 AAA Auto Select 3 AAA Program 4 AAA Quadruple Byte Program 5 AAA Unlock Bypass 3 AAA Unlock Bypass Program 2 Unlock Bypass Reset 2 Chip Erase ...
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M29DW323DT, M29DW323DB STATUS REGISTER The M29DW323D has a Status Register that pro- vides information on the current or previous Pro- gram or Erase operations executed in each bank. The various bits convey information and errors on the operation. Bus Read ...
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Table 8. Status Register Bits Operation Address Program Bank Address Program During Erase Bank Address Suspend Program Error Bank Address Chip Erase Any Address Erasing Block Block Erase before timeout Non-Erasing Block Erasing Block Block Erase Non-Erasing Block Erasing Block ...
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M29DW323DT, M29DW323DB DUAL OPERATIONS AND MULTIPLE BANK ARCHITECTURE The Multiple Bank Architecture M29DW323DT and M29DW323DB gives greater flexibility for software developers to split the code and data spaces within the memory array. The Dual Operations feature simplifies the software management ...
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MAXIMUM RATING Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause per- manent damage to the device. Exposure to Abso- lute Maximum Rating conditions for extended periods may affect device reliability. These are Table ...
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M29DW323DT, M29DW323DB DC AND AC PARAMETERS This section summarizes the operating measure- ment conditions, and the DC and AC characteris- tics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed ...
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Table 14. DC Characteristics Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO (2) Supply Current (Read) I CC1 I Supply Current (Standby) CC2 Supply Current (Program/ (1,2) I CC3 Erase) V Input Low Voltage IL V ...
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M29DW323DT, M29DW323DB Figure 11. Read Mode AC Waveforms A0-A20/ A– DQ0-DQ7/ DQ8-DQ15 BYTE tELBL/tELBH Table 15. Read AC Characteristics Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Output Valid ...
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Figure 12. Write AC Waveforms, Write Enable Controlled A0-A20/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHEL RB Table 16. Write AC Characteristics, Write Enable Controlled Symbol Alt t t Address Valid to Next Address Valid AVAV WC t ...
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M29DW323DT, M29DW323DB Figure 13. Write AC Waveforms, Chip Enable Controlled A0-A20/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHWL RB Table 17. Write AC Characteristics, Chip Enable Controlled Symbol Alt t t Address Valid to Next Address Valid AVAV ...
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Figure 14. Toggle and Alternative Toggle Bits Mechanism, Chip Enable Controlled Address Outside the Bank A0-A20 Being Programmed or Erased E G Data (1) (2) DQ2 /DQ6 Read Operation outside the Bank Being Programmed or Erased Note: 1. The Toggle ...
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M29DW323DT, M29DW323DB Figure 16. Reset/Block Temporary Unprotect AC Waveforms tPLPX RP Table 19. Reset/Block Temporary Unprotect AC Characteristics Symbol Alt (1) t PHWL RP High to Write Enable Low, Chip Enable Low PHEL RH ...
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PACKAGE MECHANICAL Figure 18. TSOP48 Lead Plastic Thin Small Outline, 12x20 mm, Bottom View Package Outline DIE Note: Drawing not to scale. Table 20. TSOP48 Lead Plastic Thin Small Outline, 12x20 mm, Package Mechanical Data ...
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M29DW323DT, M29DW323DB Figure 19. TFBGA48 6x8mm - 6x8 Ball Array, 0.8mm Pitch, Bottom View Package Outline FD FE BALL "A1" Note: Drawing not to scale. Table 21. TFBGA48 6x8mm - 6x8 Ball Array, 0.8mm Pitch, Package Mechanical Data ...
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PART NUMBERING Table 22. Ordering Information Scheme Example: Device Type M29 Architecture D = Dual Operation Operating Voltage 2.7 to 3.6V CC Device Function 323D = 32 Mbit (x8/x16), Boot Block, 1/4-3/4 partitioning Array Matrix T ...
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M29DW323DT, M29DW323DB APPENDIX A. BLOCK ADDRESSES Table 23. Top Boot Block Addresses, M29DW323DT (Kbytes/ Block Kwords) 0 64/32 1 64/32 2 64/32 3 64/32 4 64/32 5 64/32 6 64/32 7 64/32 8 64/32 9 64/32 10 64/32 11 64/32 ...
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Protection Block Block Kwords) Group 32 64/32 33 64/32 Protection Group 34 64/32 35 64/32 36 64/32 37 64/32 Protection Group 38 64/32 39 64/32 40 64/32 41 64/32 Protection Group 42 64/32 43 64/32 44 64/32 45 64/32 ...
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M29DW323DT, M29DW323DB (Kbytes/ Block Kwords) 63 8/4 64 8/4 65 8/4 66 8/4 67 8/4 68 8/4 69 8/4 70 8/4 Note: 1. Used as the Extended Block Addresses in Extended Block mode. 36/51 Protection Block (x8) Group Protection Group ...
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Table 24. Bottom Boot Block Addresses, M29DW323DB (Kbytes/ Block Kwords) 0 8/4 1 8/4 2 8/4 3 8/4 4 8/4 5 8/4 6 8/4 7 8/4 8 64/32 9 64/32 10 64/32 11 64/32 12 64/32 13 64/32 14 64/32 ...
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M29DW323DT, M29DW323DB (Kbytes/ Block Kwords) 31 64/32 32 64/32 33 64/32 34 64/32 35 64/32 36 64/32 37 64/32 38 64/32 39 64/32 40 64/32 41 64/32 42 64/32 43 64/32 44 64/32 45 64/32 46 64/32 47 64/32 48 ...
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Block Kwords) 63 64/32 64 64/32 65 64/32 66 64/32 67 64/32 68 64/32 69 64/32 70 64/32 Note: 1. Used as the Extended Block Addresses in Extended Block mode. Protection Block (x8) Group 380000h-38FFFFh 390000h-39FFFFh Protection Group 3A0000h-3AFFFFh ...
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M29DW323DT, M29DW323DB APPENDIX B. COMMON FLASH INTERFACE (CFI) The Common Flash Interface is a JEDEC ap- proved, standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to determine ...
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Table 27. CFI Query System Interface Information Address Data x16 x8 1Bh 36h 0027h 1Ch 38h 0036h 1Dh 3Ah 00B5h 1Eh 3Ch 00C5h 1Fh 3Eh 0004h 20h 40h 0000h 21h 42h 000Ah 22h 44h 0000h 23h 46h 0004h 24h 48h ...
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M29DW323DT, M29DW323DB Table 29. Primary Algorithm-Specific Extended Query Table Address Data x16 x8 40h 80h 0050h 41h 82h 0052h 42h 84h 0049h 43h 86h 0031h 44h 88h 0030h 45h 8Ah 0000h 46h 8Ch 0002h 47h 8Eh 0001h 48h 90h 0001h ...
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APPENDIX C. EXTENDED MEMORY BLOCK The M29DW323D has an extra block, the Extend- ed Block, that can be accessed using a dedicated command. This Extended Block is 32 KWords in x16 mode and 64 KBytes in x8 mode ...
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M29DW323DT, M29DW323DB APPENDIX D. BLOCK PROTECTION Block protection can be used to prevent any oper- ation from modifying the data stored in the memo- ry. The blocks are protected in groups, refer to APPENDIX A., Tables 23 and Protection Groups. ...
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Figure 20. Programmer Equipment Group Protect Flowchart Note: Block Protection Groups are shown in START ADDRESS = GROUP ADDRESS Wait 4µ ...
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M29DW323DT, M29DW323DB Figure 21. Programmer Equipment Chip Unprotect Flowchart NO = 1000 Note: Block Protection Groups are shown in 46/51 START PROTECT ALL GROUPS CURRENT GROUP = 0 ...
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Figure 22. In-System Equipment Group Protect Flowchart Note: 1. Block Protection Groups are shown can be either START WRITE 60h ADDRESS = GROUP ADDRESS ...
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M29DW323DT, M29DW323DB Figure 23. In-System Equipment Chip Unprotect Flowchart NO = 1000 ISSUE READ/RESET COMMAND Note: Block Protection Groups are shown in 48/51 START PROTECT ALL GROUPS CURRENT GROUP = ...
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REVISION HISTORY Table 33. Document Revision History Date Version 20-Sep-2001 -01 First Issue (Target Specification) 26-Oct-2001 -02 Document expanded to full Product Preview 16-Jan-2002 -03 Corrections made in “Primary Algorithm-Specific Extended Query” Table in Appendix-B Description of Ready/Busy signal clarified ...
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M29DW323DT, M29DW323DB Date Version V minimum value updated and I PP Architecture option updated in Block Protect/Unprotect code updated in 19-Dec-2003 7.4 Customer Lockable Extended Block mechanism modified in Memory Block. APPENDIX section and Note 2 added ...
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INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYX™ PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN NUMONYX'S TERMS AND CONDITIONS OF SALE ...